- Program: Humboldt Research Fellowship
- Selection date: July 2004
- Business address (at time of selection): National Academy of Sciences of Ukraine, Kiev, Ukraine
- Current contact address: V. Lashkarev Institute of Semiconductor Physics, Physical Principles of Integrated Microelectronics, National Academy of Sciences of Ukraine, Kiev, Ukraine
- Area of expertise: Semiconductor Physics
- Keywords: Substoichiometric Si oxide, Interface layer, SiO2 precipitates, Thermodynamics, Gibbs free energy
- Host: Prof. Dr. Walther Fuhs (Helmholtz-Zentrum Berlin für Materialien und Energie (HZB), Germany), Prof. Dr. Norbert Nickel (Helmholtz-Zentrum Berlin für Materialien und Energie (HZB), Germany), Prof. Margit Zacharias (Albert-Ludwigs-Universität Freiburg, Germany)
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