- Program: Humboldt Research Award
- Selection date: October 1998
- Business address (at time of selection): Palo Alto Research Center, Palo Alto, United States of America
- Current contact address: Materials Department, University of California, Santa Barbara, Santa Barbara, United States of America
- Area of expertise: Semiconductor Physics
- Keywords: Defekte, Dotierung, GaN, Grenzflächen, Nitrid-Halbleiter
- Host: Prof. Dr. Klaus H. Ploog (Paul-Drude-Institut für Festkörperelektronik (PDI), Berlin, Germany), Prof. Dr. Matthias Scheffler (Fritz-Haber-Institut der Max-Planck-Gesellschaft, Berlin, Germany), Prof. Dr. Jörg Neugebauer (Max-Planck-Institut für Nachhaltige Materialien, Düsseldorf, Germany)
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