| 2001 | James Stuart Harris, P. Krispin, S. G. Spruytte, K. H. Ploog: Admittance dispersion of n-type GaAs/Ga(As, N)/GaAs heterostructures grown by molecular beam epitaxy. In: J. Appl. Phys. , 2001, 2405-2410 |
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| 2001 | P. Krispin, S. G. Spruyette, James Stuart Harris, K. H. Ploog: Deep-level defects in MBE grown Ga(A,N) layers. In: Physica B, 2001, 870-873 |
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| 2001 | James Stuart Harris, S. Spruytte, W. Wampler, P. Krispin, C. Coldren, M. Larson, K. Ploog: Incorporation of Nitrogen in Nitride-Arsenides: Origin of improved Luminescence Efficiency after Anneal. In: J. Appl. Phys. , 2001, 4401-4406 |
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| 2001 | James Stuart Harris, S. G. Spruytte, M. C. Larson, W. Wampler, C. W. Coldren, H. E. Peterson, P. Krispin, S. T. Picraux, K. Ploog: Nitrogen incorporation in Group III-Nitride Arsenide materials grown by elemental source MBE. In: J. Crystal Growth, 2001, 506-515 |
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| 2001 | James Stuart Harris, P. Krispin, S. G. Spruytte, K. H. Ploog: Origin and annealing of deep-level defects in p-type GaAs/Ga(As,N)/GaAs heterostructures grown by molecular beam epitaxy. In: J. Appl. Phys. , 2001, 6294-6301 |
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| 2000 | James Stuart Harris, P. Krispin, S. G. Spruytte, K. H. Ploog: Electrical depth profile of p-type GaAs/Ga(As,N)/GaAs heterostructures determined by capacitance-voltage measurements. In: J. Apply. Phys. , 2000, 4153-4158 |
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