Prof. Dr. Darrell G. Schlom

Profile

Academic positionFull Professor
Research fieldsSynthesis and Properties of Functional Materials,Semiconductor Physics,Mineralogy, Crystallography
KeywordsMolekularstrahlepitaxie, Oxidische Schichten, Oxidelektronik, Oxidische Substrate, Crystal Growth

Current contact address

CountryUnited States of America
CityIthaca
InstitutionCornell University
InstituteDepartment of Materials Science and Engineering
Homepagehttp://www.ems.psu.edu/~schlom/

Host during sponsorship

Prof. Dr. Jochen MannhartInstitut für Physik, Universität Augsburg, Augsburg
Prof. Dr. Jochen MannhartAbteilung Experimentelle Physik, Max-Planck-Institut für Festkörperforschung, Stuttgart
Prof. Dr. Thomas SchroederLeibniz-Institut für Kristallzüchtung (IKZ), Berlin
Start of initial sponsorship01/08/1999

Programme(s)

1999Humboldt Research Fellowship Programme
2018Humboldt Research Award Programme

Nominator's project description

Professor Schlom is a world leader in utilizing molecular-beam epitaxy to create new oxide materials that do not exist in nature. He does this by customizing the structure of oxides at the atomic-layer level. Professor Schlom’s pioneering contributions propelled molecular-beam epitaxy to become a superb method for the preparation of atomically precise, oxide heterostructures with high purity, high mobility, high crystalline perfection, and exquisite control of layer thickness. In Germany, Professor Schlom intends to further advance heterostructure growth of complex oxides by designing and growing novel oxide crystals to be used as substrates.