| 2002 | George Cirlin, Vyatcheslav Egorov, Leonid Sokolov, Peter Werner: Ordering of Nanostructures in a Si/Ge0.3Si0.7/Ge System during Molecular Beam Epitaxy. In: Semiconductors, 2002, 1294-1298 |
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| 2002 | V.A.Volodin, D.A.Orehov, M.D.Efremov, V.A.Sachkov, B.A.Kolesov, N.D.Zakharov, V.A.Egorov, G.E.Cirlin. P.Werner Raman study of Ge quantum dots formed by submonolayer Ge coverages in Ge/Si superlattices. In: Zhores Alferov, Leo Esaki, Proc. 10th Int. Symp. 'Nanostructures: Physics and Technology', St Petersburg, Russia, June 17-21, 2002 . Nauka, 2002. 179-182 |
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| 2002 | George Cirlin, Vadim Talalaev, Nikolai Zakharov, Vyatcheslav Egorov, Peter Werner: Room temperature superlinear power dependence of photoluminescence from defect-free Si/Ge quantum dot multilayer structures. In: phys.stat.sol.(b), 2002, R1-R3 |
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| 2002 | H.Karl, I.Grosshans, A.Wenzel, B.Stritzker, R.Claessen, V.N.Strocov, G.E.Cirlin, V.A.Egorov, N.K.Polyakov,
Yu.B.Samsonenko, D.V.Denisov, V.M.Ustinov, Zh.I.Alferov: Stoichiometry and absolute atomic concentration profiles obtained by combined Rutherford backscattering spectroscopy and secondary-ion mass spectroscopy: InAs nanocrystals in Si. In: Nanotechnology, 2002, 631-634 |
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| 2001 | George Cirlin, Vyatcheslav Egorov, Boris Volovik, Andrei Tsatsul'nikov, Victor Ustinov, Nikolai Ledentsov, Nikolai Zakharov, Peter Werner, Ulrich Gösele Optical and structural properties of Ge submonolayer nano-inclusions in a Si matrix grown by molecular beam epitaxy. . In: Nanotechnology, 2001, 417-420 |
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