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Profile
| Academic position | Full Professor |
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| Research fields | Semiconductor Physics |
| Keywords | Cubic Boron Nitride films, Wide Band-gap Semiconductor Materials, Nanoelectronics, Nano Materials |
Current contact address
| Country | People's Republic of China |
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| City | Beijing |
| Institution | Chinese Academy of Sciences (CAS) |
| Institute | Institute of Semiconductors, Lab. of Semiconductor Materials Science |
Host during sponsorship
| Prof. Dr. Paul Ziemann | Institut für Festkörperphysik, Universität Ulm, Ulm |
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| Start of initial sponsorship | 01/07/2003 |
Program(s)
| 2002 | Humboldt Research Fellowship Programme |
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Publications (partial selection)
| 2005 | X. W. Zhang, H. Yin, H.-G. Boyen, P. Ziemann, M. Ozawa: Effects of crystalline quality on the phase stability of cubic boron nitride thin films under medium-energy ion irradiation. In: Diamond & Related Materials, 2005, 1482-1488 |
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| 2005 | X. W. Zhang, H.-G. Boyen, P. Ziemann, F. Banhart: Heteroepitaxial growth of cubic boron nitride films on single-crystalline (001) diamond substrates. In: Applied Physics A Materials Science & Processing, 2005, 735-738 |
| 2005 | X. W. Zhang, H.-G. Boyen, H. Yin, P. Ziemann, F. Banhart: Microstructure of the intermediate turbostratic boron nitride layer. In: Diamond & Related Materials, 2005, 1474-1481 |
| 2004 | X.W. Zhang, H.-G. Boyen P. Ziemann M. Ozawa F. Banhart M. Schreck: Growth mechanism for epitaxial cubic boron nitride films on diamond substrates by ion beam assisted deposition. In: Diamond and Related Materials, 2004, 1144-1148 |