Dr. Kin Kiong Lee

Profile

Academic positionLecturer, Assistant Professor, Researcher
Research fieldsCommunication Technology and Networks, High-Frequency Technology and Photonic Systems, Signal Processing and Machine Learning for Information Technology,Semiconductor Physics
KeywordsLow-temperature measurement, Radiation Effects, Silicon carbide, ZnO, Graphene

Current contact address

CountrySingapore
CitySingapore

Host during sponsorship

Dr. Gerhard PenslLehrstuhl für Angewandte Physik (LAP), Friedrich-Alexander-Universität Erlangen-Nürnberg, Erlangen
Start of initial sponsorship01/03/2005

Programme(s)

2004Humboldt Research Fellowship Programme

Publications (partial selection)

2011Kin Kiong Lee, Yi Luo, Xiaofeng Lu, Peng Bao, Aimin Song: Development of Reactive-Ion Etching for ZnO-Based Nanodevices. In: IEEE TRANSACTIONS ON NANOTECHNOLOGY, 2011, 839-843
2010Kin Kiong Lee, David Jamieson: Characterization of silicon polycrystalline solar cells at cryogenic temperatures with ion beam-induced charge. In: Solar Energy Materials & Solar Cells, 2010, 2405-2410
2010Kin Kiong Lee: Current Transient Effect in N-channel 6H-SiC MOSFET Induced by Heavy Ion Irradiation. In: Materials Science Forum, 2010, 1013-1016
2007Kin Kiong Lee, Gerhard Pensl, Maher Soueidan, Gabriel Ferro: Electronic Properties of Thermally Oxidized Single-domain 3C-SiC/6H-SiC Grown by Vapour-Liquid-Solid Mechanism. In: Material Science Forum, 2007, 505-508
2007Kin Kiong Lee, Michael Laube, Takeshi Ohshima, Hisayoshi Itoh, Gerhard Pensl: Hall Effect and Admittance Measurements of n-channel 6H-SiC MOSFETs. In: Material Science Forum, 2007, 791-794
2007Michele Pozzi, Musaab Hassan, Alun J Harris, J S Burdess, Liudi Jiang, Kin Kiong Lee, Rebecca Cheung, G J Phelps, N G Wright, C A Zorman and M Mehregany : Mechanical properties of a 3C-SiC film between room temperature and 600C. In: Journal of Physics D: Applied Physics, 2007, 3335-3342
2006Kin Kiong Lee, Takeshi Ohshima, Akihiko Ohi, Hisayoshi Itoh and Gerhard Pensl: Anomalous Increase in Effective Channel Mobility on Gamma-Irradiated p-Channel SiC Metal-Oxide-Semiconductor Field-Effect Transistors Containing Step Bunching . In: Japan Journal of Applied Physics, 2006, 6830-6836
2006Kin Kiong Lee, Gerhard Pensl, Maher Soueidan, Gabriel Ferro and Yves Monteil: Very Low Interface State Density From Thermally Oxidized Single-Domain 3C-SiC/6H-SiC Grown by Vapour-Liquid-Solid Mechanism . In: Japan Journal of Applied Physics , 2006, 6823-6829
2004Michael Laube, Gerhard Pensl, Kin Kiong Lee, and Takeshi Ohshima: Comparison of the electrical channel properties between Dry and Wet oxidized 6H-SiC MOSFETs investigated by Hall Effect . In: Material Science Forum, 2004, 1381-1384
2004Takeshi Ohshima, Kin Kiong Lee, Yuuki ISHIDA, Kazutoshi KOJIMA, Yasunori TANAKA, Tetsuo TAKAHASHI, Masahito YOSHIKAWA, Hajime OKUMURA, Kazuo ARAI and Tomihiro KAMIYA: Relationship between the Current Direction in the Inversion Layer and the Electrical Characteristics of Metal-Oxide-Semiconductor Field Effect Transistors on 3C-SiC. In: Materials Science Forum , 2004, 1405-1408
2003Kin Kiong Lee, Takeshi Ohshima, Andrew Saint, David N. Jamieson, and H. Itoh: A Comparative Study of the Radiation Hardness of Silicon Carbide using Light Ions. In: Nuclear Instrument and Methods in Physics Research B, 2003, 489-494
2003Kin Kiong Lee, Takeshi Ohshima, and H. Itoh: Modelling of Radiation Response of P-channel SiC MOSFETs. In: Materials Science Forum, 2003, 761-764
2003Kin Kiong Lee, Yuuki Ishida, Takeshi Ohshima, Kazutoshi Kojima, Yasunori Tanaka, Tetsuo Takahashi, Hajime Okumura, Kazuo Arai, and Tomihiro Kamiya: N-Channel MOSFETs Fabricated on Homoepitaxy-Grown 3C-SiC Films. In: IEEE ELECTRON DEVICE LETTERS, 2003, 466-468
2003Kin Kiong Lee, Takeshi Ohshima, and Hisayoshi Itoh: Performance of Gamma Irradiated P-Channel 6H-SiC MOSFETs: High Total Dose. In: IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2003, 194-200
2003Takeshi OHSHIMA, Kin Kiong LEE, Yuuki ISHIDA, Kazutoshi KOJIMA, Yasunori TANAKA, Tetsuo TAKAHASHI, Masahito YOSHIKAWA, Hajime OKUMURA, Kazuo ARAI and Tomihiro KAMIYA: The Electrical Characteristics of Metal-Oxide-Semiconductor Field Effect Transistors Fabricated on Cubic Silicon Carbide. In: Japan Journal of Applied Physics, 2003, L625-L627
2001Kin Kiong Lee, T. Nishijima, Takeshi Ohshima, and David N. Jamieson: Ion beam induced charge gate rupture of oxide on 6H-SiC. In: Nuclear Instruments and Methods in Physics Research B, 2001, 324-328
1999Kin Kiong Lee and David Jamieson: Analysis of solar cells using the IBIC technique. In: Nuclear Instruments & Methods in Physics Research Section B, 1999, 445-450
1999Teruko Saitō, Kin Kiong Lee: Statistics on the Burmese economy: the 19th and 20th centuries. Institute of Southeast Asian Studies, 1999