Prof. Dr. Ioana Pintilie

Profile

Academic positionLecturer, Assistant Professor, Researcher
Research fieldsElementary Particle Physics
Keywordssemiconductors, electrically active defects, high-k dielectrics, Radiation defects, Radiation hardness

Current contact address

CountryRomania
CityMagurele, Ilfov
InstitutionNational Institute of Materials Physics

Host during sponsorship

Prof. Dr. Robert KlannerInstitut für Experimentalphysik, Universität Hamburg, Hamburg
Start of initial sponsorship01/06/2006

Programme(s)

2005Humboldt Research Fellowship Programme

Publications (partial selection)

2008Ioana Pintilie, Eckhart Fretwurst, Gunnar Lindström: Cluster related hole traps with enhanced-field-emission - the source for long term annealing in hadron irradiated Si diodes . In: Applied Physics Letters, 2008, 024101-024103
2007Frank Hönniger, Eckhart Fretwurst, Gunnar Lindström, Gregor Kramberger, Ioana Pintilie and Ralf Röder: DLTS measurements of radiation induced defects in epitaxial and MCz silicon detectors. In: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 2007, 104-108
2007Eckhart Fretwurst, Frank Hönniger, Gregor Kramberger, Gunnar Lindström, Ioana Pintilie and Ralf Röder: Radiation damage studies on MCz and standard and oxygen enriched epitaxial silicon devices. In: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 2007, 58-63