| 2010 | C. Radtke, C. Krug, G. V. Soares, I. J. R. Baumvol, J.M.J. Lopes, E. Durgun-Ozben, A. Nichau,
J. Schubert, and S. Mantl,: Physicochemical and electrical properties of LaLuO3/Ge(100) structures submitted to postdeposition annealings. In: Electrochemical and Solid-State Letters , 2010, G37-G39 |
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| 2009 | J.M.J.Lopes, E. Durgun Özben,
M. Roeckerath, U. Littmark, R. Lupták, St. Lenk, M. Luysberg, A. Besmehn, U. Breuer, J. Schubert, and S. Mantl: Amorphous ternary rare-earth gate oxides for future integration in MOSFETs. In: Microelectronic Engineering , 2009, 1646 |
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| 2009 | M. Roeckerath, J.M.J. Lopes, E. Durgun Özben, C. Sandow, S. Lenk, T. Heeg, J. Schubert, S. Mantl: Gadolinium scandate as an alternative gate dielectric in field effect transistors on conventional and strained silicon. In: Applied Physics A-Materials Science & Processing
DOI: 10.1007/s00339-008-4962-8 , 2009, 521 |
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| 2009 | J.M.J. Lopes, U. Littmark, M. Roeckerath, E. Durgun Özben, S. Lenk, U. Breuer, A. Besmehn, A. Stärk, P.L. Grande, M.A. Sortica, C. Radtke, J. Schubert, S. Mantl: Isotopic labeling study of oxygen diffusion in amorphous LaScO3 high-k films on Si(100) and its effects on the electrical characteristics. In: Applied Physics A-Materials Science & Processing, 2009, 447 |
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| 2009 | J.M.J.Lopes, E. Durgun-Özben, M. Roeckerath, U. Littmark, R. Lupták, S. Lenk, A. Besmehn,
U. Breuer, J. Schubert, and S. Mantl: Rare-earth based alternative gate dielectrics for future integration in MOSFETs. In: Proceedings of the 10th International Conference on Ultimate Integration on Silicon (10th ULIS)
ISBN: 978-1-4244-3705-4, 2009, 99-102 |
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| 2008 | M. Roeckerath, T. Heeg, J.M.J. Lopes,
J. Schubert, S. Mantl, A. Besmehn et al.: Characterization of lanthanum lutetium oxide thin films grown by atomic layer deposition as an alternative gate dielectric
. In: Thin Solid Films
DOI: 10.1016/j.tsf.2008.08.064
, 2008, 201 |
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| 2008 | M. Roeckerath, J.M.J. Lopes, T. Heeg, J.Schubert, S. Lenk, S.Mantl: Fully depleted SOI- and sSOI-MOSFETs with GdScO3 as gate dielectric. In: Proceedings of the 9th International Conference on Ultimate Integration on Silicon (9th ULIS)
ISBN: 978-1-4244-1729-2 , 2008, 115-117 |
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| 2008 | S. Shamuilia, V. V. Afanasev, A. Stesmans, I. McCarthy, S. A. Campbell, M. Boutchich, M. Roeckerath, T. Heeg,
J.M.J. Lopes, and J. Schubert: Photoconductivity of Hf-based binary metal oxide systems. In: Journal of Applied Physics
DOI: 10.1063/1.3020520, 2008, 111103 |
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| 2008 | S. Shamuilia, V. V. Afanasev, A. Stesmans, I. McCarthy, S. A. Campbell, M. Boutchich, J. M. J. Lopes, M. Roeckerath, T. Heeg, E. Rije, S. Mantl: Photoconductivity of Hf-based binary metal oxides. In: Microelectronic Engineering
DOI: 10.1016/j.mee.2008.09.016, 2008, 2400 |
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| 2008 | E. Durgun Özben, J.M.J. Lopes, M. Roeckerath, St. Lenk, B. Holländer, Y. Jia, D. G. Schlom, J. Schubert, S. Mantl: SmScO3 thin films as an alternative gate dielectric. In: Applied Physics Letters
DOI: 10.1063/1.2968660
, 2008, 052902 |
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| 2007 | J.M.J. Lopes, M. Roeckerath, T. Heeg, J. Schubert, U. Littmark, S. Mantl, A. Besmehn, P. Myllymäki, L. Niinistö, C. Adamo, D. G. Schlom: Amorphous lanthanum lutetium oxide thin films as an alternative high-κ material . In: ECS Transactions
DOI: 10.1149/1.2779570, 2007, 311 |
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| 2007 | A.B. Veloso, M.K.K. Nakaema, M.P.F. Godoy, J.M.J. Lopes, F. Iikawa, M.J.S. Brasil et al.: Carrier dynamics in stacked InP/GaAs quantum dots. In: Applied Physics Letters
DOI: 10.1063/1.2789705
, 2007, 121917 |
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| 2007 | J.M.J. Lopes, U. Littmark, M. Roeckerath, St. Lenk, J. Schubert, S. Mantl et al.: Effects of annealing on the electrical and interfacial properties of amorphous lanthanum scandate high-k films prepared by molecular beam deposition . In: Journal of Applied Physics , 2007, 104109 |
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| 2007 | V.V. Afanasev, S. Shamuilia, M. Badylevich, A. Stesmans, L.F. Edge, W. Tian, D.G. Schlom, J.M.J. Lopes, J. Schubert et al. Electronic structure of silicon interfaces with amorphous and epitaxial insulating oxides: Sc2O3, Lu2O3, LaLuO3. In: Microelectronic Engineering , 2007, 2278 |
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| 2007 | J.M.J. Lopes, M. Roeckerath, T. Heeg, U. Littmark, J. Schubert, S. Mantl et al. La-based ternary rare-earth oxides as alternative high-k gate dielectrics. In: Microelectronic Engineering , 2007, 1890 |
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| 2007 | F. Kremer, J.M.J. Lopes, F.C. Zawislak, P.F.P. Fichtner: Low temperature aging effects on the formation of Sn nanoclusters in SiO2/Si films and interfaces. In: Applied Physics Letters, 2007, 109733-1-109733-3 |
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| 2007 | M.P.F. de Godoy, M.K.K. Nakaema,
J.M.J. Lopes, M.J. Morschbacher, F. Iikawa, M.J.S.P. Brasil, R. Magalhaes-Paniago, J.R.R. Bortoleto, M.A. Cotta: Structural and optical properties of InP quantum dots grown on GaAs (001). In: Physica Status Solidi C - Current Topics in Solid State Physics
DOI: 10.1002/pssc.200673248 , 2007, 238 |
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| 2007 | M.P.F. de Godoy, M.K.K. Nakaema, F. Iikawa, M.J.S.Brasil, J.M.J. Lopes et al.: Structural and optical properties of InP quantum dots on GaAs(001). In: Journal of Applied Physics, 2007, 073508 |
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| 2006 | J.M.J. Lopes, M. Roeckerath, T. Heeg, E. Rije, J. Schubert, S. Mantl et al.
: Amorphous lanthanum lutetium oxide thin films as an alternative high-k gate dielectric. In: Applied Physics Letters, 2006, 222902 |
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| 2006 | J.M.J. Lopes, P.F.P. Fichtner, F.C. Kremer, F.C. Zawislak: Correlation between structural evolution and photoluminescence of Sn nanoclusters in SiO2 layers, Nucl. Inst. Meth. Phys. Res. B 242 (2006) 1890. DOI: 10.1016/j.nimb.2005.08.013
. In: Nucl. Inst. Meth. Phys. Res. B
DOI: 10.1016/j.nimb.2005.08.013
, 2006, 1890 |
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| 2005 | J.M.J. Lopes, F.C. Zawislak, P.F.P. Fichtner, F.C. Lovey, A.M. Condó: Effect of annealing atmosphere on the structure and luminescence of Sn-implanted SiO2 layers
. In: Applied Physics Letters
DOI: 10.1063/1.1849855, 2005, 023101 |
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| 2005 | J.M.J. Lopes, F.C. Zawislak, P.F.P. Fichtner, R.M. Papaléo, F.C. Lovey, A.M. Condó, A. Tolley: Formation of epitaxial beta-Sn islands at the interface of SiO2/Si layers implanted with Sn ions. In: Applied Physics Letters
DOI: 10.1063/1.1927710
, 2005, 191914 |
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| 2004 | J.M.J. Lopes, F.C. Zawislak, P.F.P. Fichtner, M. Behar, L. Rebohle, W. Skorupa: Pre-irradiation memory effect on the photoluminescence intensity of Ge-implanted SiO2 layers, Nucl. Instr. Meth. Phys. Res. B 218 (2004) 438. DOI: 10.1016/j.nimb.2003.12.025. In: Nucl. Instr. Meth. Phys. Res. B
DOI: 10.1016/j.nimb.2003.12.025, 2004, 438 |
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| 2003 | J.M.J. Lopes, F.C. Zawislak, P.F.P. Fichtner, M. Behar, L. Rebohle, W. Skorupa: Cluster coarsening and luminescence emission intensity of Ge nanoclusters in SiO2 layers, Journal of Applied Physics. 94 (2003) 6059. DOI: 10.1063/1.1616995. In: Journal of Applied Physics
DOI: 10.1063/1.1616995, 2003, 6059 |
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| 2003 | J.M.J. Lopes, F.C. Zawislak, P.F.P. Fichtner, M. Behar, L. Rebohle, W. Skorupa: Photoluminescence of Ge nanoclusters in ion implanted SiO2. In: In Progress in semiconductors II - electronic and optoelectronic applications. (Mater. Res. Soc. Symp. Proc.).
ISBN: 1-55899-681-8, 2003, 519-524 |
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| 2001 | J.M.J. Lopes, C.E. Foerster, F.C. Serbena, C.M. Lepienski, D.L. Baptista, F.C. Zawislak.: Nanoscratch testing of C60 films irradiated with N ions. In: Nucl. Instr. Meth. Phys. Res. B DOI:10.1016/S0168-583X(00)00556-5
, 2001, 673 |
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| 1998 | C.E. Foerster, F.C. Serbena, C.M. Lepienski, J.M.J. Lopes, F.C. Zawislak.: Energy transference effects on the mechanical properties of C60 Films irradiated with N ions. In: In Fundamentals of nanondentation and nanotribology. (Mater. Res. Soc. Symp. Proc.)
ISBN: 1-55899-428-9
, 1998, 299-304 |
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| D.L. Baptista, J.M.J. Lopes, M.J. Morschbacher, S.H. Dalal, S.P. Oei, K.B.K. Teo, W.I. Milne et al.: Vertically aligned carbon nanotubes growth using self-assembled Ni nanoparticles produced by ion implantation. In: In Self assembly of nanostructures aided by ion- or photon-beam irradiation-fundamentals and applications (Mater. Res. Soc. Symp. Proc. 960E, Warrendale, PA, 2007), 0960-N08-01. , |
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