Prof. Dr. Viacheslav Mikhailovich Andreev

Profile

Academic positionFull Professor
Research fieldsSemiconductor Physics
KeywordsIII-V Halbleiter-Bauelemente, Photodetektoren, Halbleiter-Laser, Solarzellen

Current contact address

CountryRussian Federation
CitySt. Petersburg
InstitutionRussian Academy of Sciences
InstituteA.F. Ioffe Physico-Technical Institute, Center of Nanoheterostructure Physics
Homepagehttp://pvlab.ioffe.ru

Host during sponsorship

Prof. Dr. Andreas BettFraunhofer-Institut für Solare Energiesysteme (ISE), Freiburg
Start of initial sponsorship01/08/2009

Program(s)

2008Humboldt Research Award Programme

Nominator's project description

Professor Viacheslav M. Andreev from the A. F. Ioffe Institute in St. Petersburg, Russia is well known internationally for his outstanding achievements in III-V heterostructure devices. He developed double-heterostructure lasers and invented the AlGaAs/GaAs heteroface solar cell. In Germany, Professor Andreev will continue his research on concentrating photovoltaic technologies, which includes the development of multi-junction solar cell and concentrator modules.

Publications (partial selection)

2013V.P.Khvostikov, S.V.Sorokina, O.A.Khvostikova, N.K.Timoshina, N.S.Potapovich, B.Y.Ber, D.Y.Kazantsev, V.M.Andreev High-efficiency GaSb photocells. In: Semiconductors, 2013, 307-313
2013V.M.Andreev, N.Y.Davidyuk, E.A.Ionova, V.D.Rumyantsev Photovoltaic modules with cylindrical waveguides in a system for the secondary concentration of solar radiation. In: Technical Physics, 2013, 1323-1328
2013V.D.Rumyantsev, V.M.Andreev, A.V.Chekalin, N.Yu.Davidyuk, O.A.Im, E.V.Khazova, N.A. Sadchikov Progress In Developing HCPV Modules Of SMALFOC-Design. In: Proc. of the 9th Int. Conf. on Concentrating Photovoltaics, 15-17 April 2013, Miyazaki, Japan, 2013, 185-188
2013A.S.Vlasov, V.P.Khvostikov, L.B.Karlina, S.V.Sorokina, N.S.Potapovich, M.Z.Shvarts, N.K.Timoshina, V.M. Lantratov, S.A.Mintairov, N.A.Kalyuzhnyi, E.P.Marukhina, V.M.Andreev Spectral-splitting concentrator photovoltaic modules based on AlGaAs/GaAs/GaSb and GaInP/InGaAs(P) solar cells. In: Technical Physics, 2013, 1034-1038
2012A.A.Andreev, V.M.Andreev, V.S.Kalinovsky, P.V.Pokrovsky, E.I.Terukov Evaluation of the Conversion Efficiency of Thin-Film Single-Junction (a-Si:H) and Tandem (μc + a-Si:H) Solar Cells by Analysis of the Experimental Dark and Load Current–Voltage (I–V) Characteristics. In: Semiconductors, 2012, 929-936
2011V.P.Khvostikov, A.S.Vlasov, S.V.Sorokina, N.S.Potapovich, N.Kh.Timoshina, M.Z.Shvarts, V.M.Andreev High-efficiency (η = 39.6%, AM 1.5D) cascade of photoconverters in solar splitting systems. In: Semiconductors, 2011, 792-797
2011V.M.Andreev Nanotechnology in solar energy. In: Russia and Germany. Scientific Humboldt Journal (in Russian), 2011, 60-63
2010V.D. Rumyantsev, Yu.V. Ashcheulov, N.Yu. Davidyuk, E.A. Ionova, P.V. Pokrovskiy, N.A. Sadchikov, V.M. Andreev CPV Modules Based On Lens Panels. In: Advances in Science and Technology, 2010, 211-218
2010V.M.Andreev, A.A.Soluyanov, M.Z.Shvarts Development of Lens Concentration Systems with Secondary Optical Elements. In: Proceedings of the 6th International Conference on Concentrating Photovoltaic Systems, 6-11 April 2010, Freiburg, Germany, 2010, 105-108
2010A.S.Vlasov, V.P.Khvostikov, S.V.Sorokina, N.S.Potapovich, V.S.Kalinovskiy, E.P.Rakova, V.M.Andreev, A.V.Bobyl, G.F.Tereschenko Gas-fired thermophotovoltaic generator based on metallic emitters and GaSb cells. In: Semiconductors, 2010, 1244-1248
2010Kalyuzhnyy,NA; Gudovskikh,AS; Evstropov,VV; Lantratov,VM; Mintairov,SA; Timoshina,NK; Shvarts,MZ; Andreev,VM Germanium subcells for multijunction GaInP/GaInAs/Ge solar cells. In: Semiconductors, 2010, 1520-1528
2010L.B.Karlina, A.S.Vlasov, M.M.Kulagina, E.P.Rakova, N.Kh.Timoshina, V.M.Andreev Highly Efficient Photovoltaic Cells Based on In0.53Ga0.47As Alloys with Isovalent Doping. In: Semiconductors, 2010, 228-232
2010A.S.Vlasov, E.P.Rakova, V.P.Khvostikov, S.V.Sorokina, V.S.Kalinovsky, M.Z.Shvarts, V.M.Andreev: Native defect concentration in Czochralski-grown Te-doped GaSb by photoluminescence. In: Solar Energy Materials & Solar Cells, 2010, 1113-1117
2010V.M.Andreev, N.Y.Davidyuk, E.A.Ionova, P.V.Pokrovskii, V.D.Rumyantsev, N.A.Sadchikov Parameter optimization of solar modules based on lens concentrators of radiation and cascade photovoltaic converters. In: Technical Physics, 2010, 277-284
2010S.A.Mintairov, V.M.Andreev, V.M.Emelyanov, N.A.Kalyuzhnyy, N.Kh.Timoshina, M.Z.Shvarts, V.M.Lantratov Study of minority carrier diffusion lengths in photoactive layers of multijunction solar cells. In: Semiconductors, 2010, 1084-1089
2010V.P.Khvostikov, S.V.Sorokina, N.S.Potapovich, O.A.Khvostikova, A.V.Malievskaya, A.S.Vlasov, M.Z.Shvarts, N.Kh.Timoshina, V.M.Andreev Thermophotovoltaic Generators Based on Gallium Antimonide. In: Semiconductors, 2010, 255-262
2009V.M.Andreev, V.V.Evstropov, V.S.Kalinovsky, V.M.Lantratov, V.P.Khvostikov: Current flow and potential efficiency of solar cells based on GaAs and GaSb p-n junctions. In: Semiconductors, 2009, 644-651
2009V.M. Andreev, V.S. Kalinovsky, R.V. Levin, B.V. Pushniy, V. D. Rumyantsev: GaSb structures with quantum dots in space charge region. In: Proceedings of the 24th European PV Solar Energy Conference and Exhibition, 21-25 September 2009, Hamburg, Germany, 2009, 740-742
2009Zh.I.Alferov, V.M.Andreev, V.D.Rumyantsev: III-V solar cells and concentrator arrays. In: V.Petrova-Koch, R.Hezel, A.Goetzberger, High-Efficient Low-Cost Photovoltaics. Springer, 2009. 101-141
2009A.S. Vlasov, V.P. Khvostikov, E.P. Rakova, S.V. Sorokina, and V.M. Andreev Photoluminescence characterization of Te-doped GaSb for TPV applications. In: Proceedings of the 24th European PV Solar Energy Conference and Exhibition, 21-25 September 2009, Hamburg, Germany, 2009, 310-312
2009V.P.Khvostikov, S.V.Sorokina, N.S.Potapovich, A.S.Vlasov, M.Z.Shvarts, N.Kh.Timoshina, V.M.Andreev Powerful high efficiency GaSb TPV and PV cells. In: Proceedings of the 24th European PV Solar Energy Conference and Exhibition, 21-25 September 2009, Hamburg, Germany, 2009, 174-177
2009A.S.Gudovskikh, N.A.Kalyuzhnyy, V.M.Lantratov, S.A.Mintairov, M.Z.Shvarts, V.M.Andreev Properties of interfaces in GaInP solar cells. In: Semiconductors, 2009, 1363-1368
2009V.M.Andreev, S.V.Sorokina, N.Kh.Timoshina, V.P.Khvostikov, M.Z.Shvarts Solar cells based on gallium antimonide. In: Semiconductors, 2009, 668-671