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Profile
| Academic position | Lecturer, Assistant Professor, Researcher |
|---|---|
| Research fields | Electronic Semiconductors, Components and Circuits, Integrated Systems, Sensor Technology, Theoretical Electrical Engineering,Semiconductor Physics |
| Keywords | Ge/GeSn, FeFET, MFIS, FeRAM, High-k |
| Honours and awards | 2022: Elevated to IEEE Senior Member 2019: SERB Startup Research Grant, India 2018: Alexander von Humboldt fellowship for postdoctoral researchers 2015: Senior Research Fellowship, MHRD, Indian Institute of Technology (IIT) - Mandi, Himachal Pradesh, India 2014: Best poster Award at Indian Institute of Technology (IIT) - Mandi, Himachal Pradesh, India 2013: Junior Research Fellowship, MHRD, Indian Institute of Technology (IIT) - Mandi, Himachal Pradesh, India |
Current contact address
| Country | India |
|---|---|
| City | Mandi |
| Institution | Indian Institute of Technology (IIT) Mandi |
| Institute | School of Computing and Electrical Engineering |
| Homepage | https://faculty.iitmandi.ac.in/~robin/ |
Host during sponsorship
| Prof. Dr. Jörg Schulze | Institut für Halbleitertechnik (IHT), Universität Stuttgart, Stuttgart |
|---|---|
| Start of initial sponsorship | 01/08/2019 |
Programme(s)
| 2018 | Humboldt Research Fellowship Programme for Postdocs |
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Publications (partial selection)
| 2021 | Robin Khosla and Daniel Schwarz and Hannes S. Funk and Kateryna Guguieva and Jörg Schulze: High-quality remote plasma enhanced atomic layer deposition of aluminum oxide thin films for nanoelectronics applications. In: Solid-State Electronics, 2021, 108027 |
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| 2021 | Choudhary, Sumit and Schwarz, Daniel and Funk, Hannes S. and Khosla, Robin and Sharma, Satinder K. and Schulze, Jörg: Impact of Charge Trapping On Epitaxial p-Ge-on-p-Si and HfO2 Based Al/HfO2/p-Ge-on-p-Si/Al Structures Using Kelvin Probe Force Microscopy and Constant Voltage Stress. In: IEEE Transactions on Nanotechnology, 20, 2021, 346-355 |
| 2019 | Sharma, Shivani and Das, Subhashis and Khosla, Robin and Shrimali, Hitesh and Sharma, Satinder K.: Realization and Performance Analysis of Facile-Processed $\mu$ -IDE-Based Multilayer HfS2/HfO2 Transistors. In: IEEE Transactions on Electron Devices, 66, 2019, 3236-3241 |
| 2018 | Khosla,Robin and Sharma,Satinder K. Frequency dispersion and dielectric relaxation in postdeposition annealed high-κ erbium oxide metal–oxide–semiconductor capacitors. In: Journal of Vacuum Science \& Technology B, 36, 2018, 012201 |
| 2018 | Shivani Sharma and Robin Khosla and Subhashis Das and Hitesh Shrimali and Satinder K. Sharma: High-performance CSA-PANI based organic phototransistor by elastomer gratings. In: Organic Electronics, 57, 2018, 14-20 |
| 2017 | Pawan Kumar and Robin Khosla and Mahesh Soni and Dinesh Deva and Satinder K. Sharma: A highly sensitive, flexible SERS sensor for malachite green detection based on Ag decorated microstructured PDMS substrate fabricated from Taro leaf as template. In: Sensors and Actuators B: Chemical, 246, 2017, 477-486 |
| 2017 | Khosla, Robin and Rolseth, Erlend Granbo and Kumar, Pawan and Vadakupudhupalayam, Senthil Srinivasan and Sharma, Satinder K. and Schulze, Jörg: Charge Trapping Analysis of Metal/Al2O3/SiO2/Si, Gate Stack for Emerging Embedded Memories. In: IEEE Transactions on Device and Materials Reliability, 17, 2017, 80-89 |
| 2017 | Shivani Sharma and Robin Khosla and Dinesh Deva and Hitesh Shrimali and Satinder K. Sharma: Fluorine-chlorine co-doped TiO2/CSA doped polyaniline based high performance inorganic/organic hybrid heterostructure for UV photodetection applications. In: Sensors and Actuators A: Physical, 261, 2017, 94-102 |
| 2016 | Soni, Mahesh and Arora, Tarun and Khosla, Robin and Kumar, Pawan and Soni, Ajay and Sharma, Satinder K.: Integration of Highly Sensitive Oxygenated Graphene With Aluminum Micro-Interdigitated Electrode Array Based Molecular Sensor for Detection of Aqueous Fluoride Anions. In: IEEE Sensors Journal, 16, 2016, 1524-1531 |
| 2016 | Pawan Kumar and Robin Khosla and Satinder K. Sharma: Nanoscale investigations: Surface potential of rare-earth oxide (Re2O3) thin films by kelvin probe force microscopy for next generation CMOS technology. In: Surfaces and Interfaces, 4, 2016, 69-76 |
| 2015 | Khosla, Robin and Kumar, Pawan and Sharma, Satinder K.: Charge Trapping and Decay Mechanism in Post Deposition Annealed Er2O3 MOS Capacitors by Nanoscopic and Macroscopic Characterization. In: IEEE Transactions on Device and Materials Reliability, 15, 2015, 610-616 |
| 2015 | Deepak K. Sharma and Robin Khosla and Satinder K. Sharma: Multilevel metal/Pb(Zr0.52Ti0.48)O3/TiOxNy/Si for next generation FeRAM technology node. In: Solid-State Electronics, 111, 2015, 42-46 |
| 2014 | Khosla,Robin and Sharma,Deepak K. and Mondal,Kunal and Sharma,Satinder K. Effect of electrical stress on Au/Pb (Zr0.52Ti0.48) O3/TiOxNy/Si gate stack for reliability analysis of ferroelectric field effect transistors. In: Applied Physics Letters, 105, 2014, 152907 |