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Prof. Dr. Mahesh Kumar

Profile

Academic positionAssociate Professor, Senior Lecturer, Reader
Research fieldsSemiconductor Physics
KeywordsHeterostructures, Semiconductors, Nanomaterials, Gas Sensors, 2D Materials
Honours and awards

2021: Friedrich-Wilhelm-Bessel Research Award

Current contact address

CountryIndia
CityJodhpur
InstitutionIndian Institute of Technology (IIT) Jodhpur
InstituteDepartment of Electrical Engineering

Host during sponsorship

Prof. Dr. Michael SalibaInstitut für Photovoltaik, Universität Stuttgart, Stuttgart
Start of initial sponsorship01/02/2022

Program(s)

2021Friedrich Wilhelm Bessel Research Award Programme

Publications (partial selection)

2022Kumar, A. and Sharma, N. and Gutal, A.P. and Kumar, D. and Kumar, P. and Paranjothy, M. and Kumar, M.: Growth and NO2 gas sensing mechanisms of vertically aligned 2D SnS2 flakes by CVD: Experimental and DFT studies. In: Sensors and Actuators B: Chemical, 353, 2022,
2021Kumar, D. and Singh, B. and Kumar, R. and Kumar, M. and Kumar, P.: Davydov splitting, resonance effect and phonon dynamics in chemical vapor deposition grown layered MoS2. In: Nanotechnology, 32, 2021,
2021Nigam, A. and Sharma, N. and Tripathy, S. and Kumar, M.: Development of semiconductor based heavy metal ion sensors for water analysis: A review. In: Sensors and Actuators, A: Physical, 330, 2021,
2021Das, S. and Singh, J. and Kumar, M.: Fabrication of Fast and Reliable Pulse Laser-Ablated ZnO Nanoparticles-Based Formaldehyde Sensor. In: IEEE Transactions on Electron Devices, 68, 2021, 1872-1877
2021Wang, H. and Ma, J. and Zhang, J. and Feng, Y. and Vijjapu, M.T. and Yuvaraja, S. and Surya, S.G. and Salama, K.N. and Dong, C. and Wang, Y. and Kuang, Q. and Tshabalala, Z.P. and Motaung, D.E. and Liu, X. and Yang, J. and Fu, H. and Yang, X. and An, X. and Zhou, S. and Zi, B. and Liu, Q. and Urso, M. and Zhang, B. and Akande, A.A. and Prasad, A.K. and Hung, C.M. and Van Duy, N. and Hoa, N.D. and Wu, K. and Zhang, C. and Kumar, R. and Kumar, M. and Kim, Y. and Wu, J. and Wu, Z. and Yang, X. and Vanalakar, S.A. and Luo, J. and Kan, H. and Li, M. and Jang, H.W. and Orlandi, M.O. and Mirzaei, A. and Kim, H.W. and Kim, S.S. and Uddin, A.S.M.I. and Wang, J. and Xia, Y. and Wongchoosuk, C. and Nag, A. and Mukhopadhyay, S. and Saxena, N. and Kumar, P. and Do, J.-S. and Lee, J.-H. and Hong, S. and Jeong, Y. and Jung, G. and Shin, W. and Park, J. and Bruzzi, M. and Zhu, C. and Gerald, R.E. and Huang, J.: Gas sensing materials roadmap. In: Journal of Physics Condensed Matter, 33, 2021,
2021Bhati, V.S. and Kumar, M. and Banerjee, R.: Gas sensing performance of 2D nanomaterials/metal oxide nanocomposites: a review. In: Journal of Materials Chemistry C, 9, 2021, 8776-8808
2021Nikolskaya, A. and Okulich, E. and Korolev, D. and Stepanov, A. and Nikolichev, D. and Mikhaylov, A. and Tetelbaum, D. and Almaev, A. and Bolzan, C.A. and Buaczik, A. and Giulian, R. and Grande, P.L. and Kumar, A. and Kumar, M. and Gogova, D.: Ion implantation in β-Ga2O3: Physics and technology. In: Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, 39, 2021,
2021Sharma, N. and Nigam, A. and Lobanov, D. and Gupta, A. and Novikov, A. and Kumar, M.: Mercury (II) Ion Detection using AgNWs-MoS2 Nanocomposite on GaN HEMT for IoT Enabled Smart Water Quality Analysis. In: IEEE Internet of Things Journal, 2021,
2021Goel, N. and Bera, J. and Kumar, R. and Sahu, S. and Kumar, M.: MoS2-PVP Nanocomposites Decorated ZnO Microsheets for Efficient Hydrogen Detection. In: IEEE Sensors Journal, 21, 2021, 8878-8885
2021Bhati, V.S. and Kumar, A. and Valappil, M.O. and Alwarappan, S. and Kumar, M.: Phosphorene Oxide Quantum Dots Decorated ZnO Nanostructure-Based Hydrogen Gas Sensor. In: IEEE Sensors Journal, 21, 2021, 7283-7290
2021Kumar, R. and Goel, N. and Raliya, R. and Gupta, G. and Biswas, P. and Zhang, J. and Kumar, M.: Plasmonic Au Nanoparticles Sensitized MoS for Bifunctional NO and Light Sensing. In: IEEE Sensors Journal, 21, 2021, 4190-4197
2021Khan, M.A. and Kumar, A. and Zhang, J. and Kumar, M.: Recent advances and prospects in reduced graphene oxide-based photodetectors. In: Journal of Materials Chemistry C, 9, 2021, 8129-8157
2021Goel, N. and Kumar, M.: Recent advances in ultrathin 2D hexagonal boron nitride based gas sensors. In: Journal of Materials Chemistry C, 9, 2021, 1537-1549
2021Rajamani, S. and Kumar, M.: Spectrum Selective Narrowband Optical Detectors. In: Resonance, 26, 2021, 1211-1220
2021Rahman, M.T. and Kumar, R. and Kumar, M. and Qiao, Q.: Two-dimensional transition metal dichalcogenides and their composites for lab-based sensing applications: Recent progress and future outlook. In: Sensors and Actuators, A: Physical, 318, 2021,
2021Das, S. and Kumar, A. and Kumar, A. and Singh, J. and Jha, R. and Kumar, M.: UV Light Detection Using Resonance Frequency of Piezoelectric Quartz Crystal. In: IEEE Transactions on Electron Devices, 68, 2021, 2791-2795
2021Hojamberdiev, M. and Vargas, R. and Bhati, V.S. and Torres, D. and Kadirova, Z.C. and Kumar, M.: Unraveling the photoelectrochemical behavior of Ni-modified ZnO and TiO2 thin films fabricated by RF magnetron sputtering. In: Journal of Electroanalytical Chemistry, 882, 2021,
2021Goel, N. and Kumar, R. and Kumar, M.: Visualization of band offsets at few-layer MoS2/Ge heterojunction. In: Nanotechnology, 32, 2021,
2021Shringi, A.K. and Betal, A. and Sahu, S. and Kumar, M.: Write-once-read-many-times resistive switching behavior of amorphous barium titanate based device with very high on-off ratio and stability. In: Applied Physics Letters, 118, 2021,
2020Sharma, P. and Bhati, V.S. and Kumar, M. and Sharma, R. and Mukhiya, R. and Awasthi, K. and Kumar, M.: Development of ZnO nanostructure film for pH sensing application. In: Applied Physics A: Materials Science and Processing, 126, 2020,
2020Hojamberdiev, M. and Goel, N. and Kumar, R. and Kadirova, Z.C. and Kumar, M.: Efficient NO2sensing performance of a low-cost nanostructured sensor derived from molybdenite concentrate. In: Green Chemistry, 22, 2020, 6981-6991
2020Agrawal, A.V. and Kumar, R. and Yang, G. and Bao, J. and Kumar, M. and Kumar, M.: Enhanced adsorption sites in monolayer MoS2 pyramid structures for highly sensitive and fast hydrogen sensor. In: International Journal of Hydrogen Energy, 45, 2020, 9268-9277
2020Bhati, V.S. and Hojamberdiev, M. and Kumar, M.: Enhanced sensing performance of ZnO nanostructures-based gas sensors: A review. In: Energy Reports, 6, 2020, 46-62
2020Das, S. and Kumar, R. and Singh, J. and Kumar, M.: Fabrication of Microsensor for Detection of Low-Concentration Formaldehyde Gas in Formalin-Treated Fish. In: IEEE Transactions on Electron Devices, 67, 2020, 5710-5716
2020Rajbhar, M.K. and Rajamani, S. and Singh, S.K. and Surodin, S. and Nikolichev, D. and Kryukov, R. and Korolev, D. and Nikolskaya, A. and Belov, A. and Nezhdanov, A. and Mikhaylov, A. and Tetelbaum, D. and Kumar, M.: Gallium nitride nanocrystal formation in Si3N4 matrix by ion synthesis. In: Bulletin of Materials Science, 43, 2020,
2020Barala, S.S. and Banerjee, N. and Shringi, A. and Kumar, M.: Gamma radiation detection response of pt/pzt/sro based capacitor for dosimetry application. In: IEEE Electron Device Letters, 41, 2020, 1564-1567
2020Singh, J. and Kumar, A. and Kumar, M.: Highly Tunable Film Bulk Acoustic Wave Resonator Based on Pt/ZnO/Fe65Co35Thin Films. In: IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control, 67, 2020, 2130-2134
2020Xu, Y. and Lou, C. and Zheng, L. and Zheng, W. and Liu, X. and Kumar, M. and Zhang, J.: Highly sensitive and selective detection of acetone based on platinum sensitized porous tungsten oxide nanospheres. In: Sensors and Actuators, B: Chemical, 307, 2020,
2020Nigam, A. and Goel, N. and Bhat, T.N. and Tawabur Rahman, M. and Dolmanan, S.B. and Qiao, Q. and Tripathy, S. and Kumar, M.: Real time detection of Hg2+ ions using MoS2 functionalized AlGaN/GaN high electron mobility transistor for water quality monitoring. In: Sensors and Actuators, B: Chemical, 309, 2020,
2020Kumar, R. and Kumar, M.: Single-atom catalysts boosted ultrathin film sensors. In: Rare Metals, 39, 2020, 1110-1112
2020Kumar, R. and Goel, N. and Hojamberdiev, M. and Kumar, M.: Transition metal dichalcogenides-based flexible gas sensors. In: Sensors and Actuators, A: Physical, 303, 2020,
2020Nigam, A. and Sharma, N. and Lobanov, D. and Novikov, A. and Kumar, M.: Ultrasensitive Detection of Mercury Ions under UV Illumination of MoS2Functionalized AlGaN/GaN Transistor. In: IEEE Transactions on Electron Devices, 67, 2020, 5693-5700
2019Goel, N. and Kumar, R. and Jain, S.K. and Rajamani, S. and Roul, B. and Gupta, G. and Kumar, M. and Krupanidhi, S.B.: A high-performance hydrogen sensor based on a reverse-biased MoS2/GaN heterojunction. In: Nanotechnology, 30, 2019,
2019Rahman, M.T. and Kabir, M.F. and Gurung, A. and Reza, K.M. and Pathak, R. and Ghimire, N. and Baride, A. and Wang, Z. and Kumar, M. and Qiao, Q.: Graphene Oxide-Silver Nanowire Nanocomposites for Enhanced Sensing of Hg2+. In: ACS Applied Nano Materials, 2, 2019, 4842-4851
2019Nigam, A. and Bhat, T.N. and Bhati, V.S. and Dolmanan, S.B. and Tripathy, S. and Kumar, M.: MPA-GSH Functionalized AlGaN/GaN High-Electron Mobility Transistor-Based Sensor for Cadmium Ion Detection. In: IEEE Sensors Journal, 19, 2019, 2863-2870
2019Hojamberdiev, M. and Zhu, G. and Lu, H. and Kumar, M. and Wang, M. and Gao, J.: MoS 2 quantum dots-modified porous β-Bi 2 O 3 microspheres with enhanced visible-light-induced photocatalytic activity for Bisphenol A degradation and NO removal. In: Journal of Materials Science: Materials in Electronics, 30, 2019, 2610-2621
2019Bhati, V.S. and Sheela, D. and Roul, B. and Raliya, R. and Biswas, P. and Kumar, M. and Roy, M.S. and Nanda, K.K. and Krupanidhi, S.B. and Kumar, M.: NO2 gas sensing performance enhancement based on reduced graphene oxide decorated V2O5 thin films. In: Nanotechnology, 30, 2019,
2019Singh Bhati, V. and Nathani, A. and Nigam, A. and Sharma, C.S. and Kumar, M.: PAN/(PAN-b-PMMA) derived nanoporous carbon nanofibers loaded on ZnO nanostructures for hydrogen detection. In: Sensors and Actuators, B: Chemical, 299, 2019,
2019Nigam, A. and Bhati, V.S. and Bhat, T.N. and Dolmanan, S.B. and Tripathy, S. and Kumar, M.: Sensitive and Selective Detection of Pb2+ Ions Using 2,5-Dimercapto-1,3,4-Thiadiazole Functionalized AlGaN/GaN High Electron Mobility Transistor. In: IEEE Electron Device Letters, 40, 2019, 1976-1979
2019Sharma, N.L. and Rajamani, S. and Shengurov, V. and Baidus, N. and Korolev, D. and Nikolskaya, A. and Mikhaylov, A. and Tetelbaum, D. and Kumar, M.: Sequential nitrogen ion implantation in Si-based GaAs matrix and subsequent thermal annealing process: Electrical characterization. In: Proceedings of the Indian National Science Academy, 85, 2019, 681-687
2018Rajamani, S. and Arora, K. and Konakov, A. and Belov, A. and Korolev, D. and Nikolskaya, A. and Mikhaylov, A. and Surodin, S. and Kryukov, R. and Nikolitchev, D. and Sushkov, A. and Pavlov, D. and Tetelbaum, D. and Kumar, M. and Kumar, M.: Deep UV narrow-band photodetector based on ion beam synthesized indium oxide quantum dots in Al2O3 matrix. In: Nanotechnology, 29, 2018,
2018Goel, N. and Kumar, R. and Mishra, M. and Gupta, G. and Kumar, M.: Determination of band alignment at two-dimensional MoS2/Si van der Waals heterojunction. In: Journal of Applied Physics, 123, 2018,
2018Bhati, V.S. and Ranwa, S. and Fanetti, M. and Valant, M. and Kumar, M.: Efficient hydrogen sensor based on Ni-doped ZnO nanostructures by RF sputtering. In: Sensors and Actuators, B: Chemical, 255, 2018, 588-597
2018Goel, N. and Kumar, R. and Hojamberdiev, M. and Kumar, M.: Enhanced Carrier Density in a MoS2/Si Heterojunction-Based Photodetector by Inverse Auger Process. In: IEEE Transactions on Electron Devices, 65, 2018, 4149-4154
2018Kumar, R. and Goel, N. and Kumar, M.: High performance NO2 sensor using MoS2 nanowires network. In: Applied Physics Letters, 112, 2018,
2018Bhati, V.S. and Ranwa, S. and Rajamani, S. and Kumari, K. and Raliya, R. and Biswas, P. and Kumar, M.: Improved Sensitivity with Low Limit of Detection of a Hydrogen Gas Sensor Based on rGO-Loaded Ni-Doped ZnO Nanostructures. In: ACS Applied Materials and Interfaces, 10, 2018, 11116-11124
2018Kumar, M. and Agrawal, A.V. and Kumar, R. and Venkatesan, S. and Zakhidov, A. and Yang, G. and Bao, J. and Kumar, M.: Photoactivated Mixed In-Plane and Edge-Enriched p-Type MoS2 Flake-Based NO2 Sensor Working at Room Temperature. In: ACS Sensors, 3, 2018, 998-1004
2018Arora, K. and Goel, N. and Kumar, M. and Kumar, M.: Ultrahigh Performance of Self-Powered β-Ga2O3 Thin Film Solar-Blind Photodetector Grown on Cost-Effective Si Substrate Using High-Temperature Seed Layer. In: ACS Photonics, 5, 2018, 2391-2401
2017Korolev, D.S. and Mikhaylov, A.N. and Belov, A.I. and Konakov, A.A. and Vasiliev, V.K. and Nikolitchev, D.E. and Surodin, S.I. and Tetelbaum, D.I. and Kumar, M.: Composition and luminescence of Si and SiO2 layers co-implanted with Ga and N ions. In: International Journal of Nanotechnology, 14, 2017, 637-645
2017Kumar, M. and Bhati, V.S. and Kumar, M.: Effect of Schottky barrier height on hydrogen gas sensitivity of metal/TiO2 nanoplates. In: International Journal of Hydrogen Energy, 42, 2017, 22082-22089
2017Nigam, A. and Bhat, T.N. and Rajamani, S. and Dolmanan, S.B. and Tripathy, S. and Kumar, M.: Effect of self-heating on electrical characteristics of AlGaN/ GaN HEMT on Si (111) substrate. In: AIP Advances, 7, 2017,
2017Hojamberdiev, M. and Kawashima, K. and Kumar, M. and Yamakata, A. and Yubuta, K. and Gurlo, A. and Hasegawa, M. and Domen, K. and Teshima, K.: Engaging the flux-grown La1−xSrxFe1−yTiyO3 crystals in visible-light-driven photocatalytic hydrogen generation. In: International Journal of Hydrogen Energy, 42, 2017, 27024-27033
2017Korolev, D.S. and Nikolskaya, A.A. and Krivulin, N.O. and Belov, A.I. and Mikhaylov, A.N. and Pavlov, D.A. and Tetelbaum, D.I. and Sobolev, N.A. and Kumar, M.: Formation of hexagonal 9R silicon polytype by ion implantation. In: Technical Physics Letters, 43, 2017, 767-769
2017Barala, S.S. and Bhati, V.S. and Kumar, M.: High energy photon induced Fermi-level shift of Ba0.5Sr0.5TiO3 thin films. In: Thin Solid Films, 639, 2017, 107-112
2017Kumar, M. and Bhati, V.S. and Ranwa, S. and Singh, J. and Kumar, M.: Pd/ZnO nanorods based sensor for highly selective detection of extremely low concentration hydrogen. In: Scientific Reports, 7, 2017,
2017Kumar, R. and Goel, N. and Kumar, M.: UV-Activated MoS2 Based Fast and Reversible NO2 Sensor at Room Temperature. In: ACS Sensors, 2, 2017, 1744-1752
2016Barala, S.S. and Banerjee, N. and Kumar, M.: Effect of Gamma Ray Irradiation on Epitaxial Pb(Zr,Ti)O3 /SrRuO3 Tunable Varactor Devices. In: Journal of Electronic Materials, 45, 2016, 4122-4128
2016Rajamani, S. and Korolev, D. and Belov, A. and Surodin, S. and Nikolitchev, D. and Okulich, E. and Mikhaylov, A. and Tetelbaum, D. and Kumar, M.: Effect of annealing on carrier transport properties of GaN-incorporated silicon. In: RSC Advances, 6, 2016, 74691-74695
2016Ranwa, S. and Barala, S.S. and Fanetti, M. and Kumar, M.: Effect of gamma irradiation on Schottky-contacted vertically aligned ZnO nanorod-based hydrogen sensor. In: Nanotechnology, 27, 2016,
2016Konakov, A.A. and Filatov, D.O. and Korolev, D.S. and Belov, A.I. and Mikhaylov, A.N. and Tetelbaum, D.I. and Kumar, M.: Electronic states in spherical GaN nanocrystals embedded in various dielectric matrices: The k · p-calculations. In: AIP Advances, 6, 2016,
2016Barala, S.S. and Singh, J. and Kumar, M. and Kumar, M.: High tolerance of bst thin film based varactor under neutron irradiation. In: IEEE Transactions on Electron Devices, 63, 2016, 3677-3682
2016Ranwa, S. and Kumar, M. and Kulriya, P.K. and Fanetti, M. and Valant, M. and Kumar, M.: Improvement in the Sensing Response of Nano-Crystalline ZnO-Based Hydrogen Sensor: Effect of Swift Heavy Ion Irradiation. In: IEEE Sensors Journal, 16, 2016, 7586-7592
2016Shetty, A. and Kumar, M. and Roul, B. and Vinoy, K.J. and Krupanidhi, S.B.: InN quantum dot based infra-red photodetectors. In: Journal of Nanoscience and Nanotechnology, 16, 2016, 709-714
2016Barala, S.S. and Roul, B. and Banerjee, N. and Kumar, M.: Modulation of Pb chemical state of epitaxial lead zirconate titanate thin films under high energy irradiation. In: Journal of Applied Physics, 120, 2016,
2016Shejale, K.P. and Laishram, D. and Roy, M.S. and Kumar, M. and Sharma, R.K.: On the study of phase and dimensionally controlled titania nanostructures synthesis at sub-zero temperatures. In: Materials and Design, 92, 2016, 535-540
2015Roul, B. and Kumar, M. and Rajpalke, M.K. and Bhat, T.N. and Krupanidhi, S.B.: Binary group III-nitride based heterostructures: Band offsets and transport properties. In: Journal of Physics D: Applied Physics, 48, 2015,
2015Goldenberg, E. and Bayrak, T. and Ozgit-Akgun, C. and Haider, A. and Leghari, S.A. and Kumar, M. and Biyikli, N.: Effect of O2/Ar flow ratio and post-deposition annealing on the structural, optical and electrical characteristics of SrTiO3 thin films deposited by RF sputtering at room temperature. In: Thin Solid Films, 590, 2015, 193-199
2015Singh, J. and Ranwa, S. and Akhtar, J. and Kumar, M.: Growth of residual stress-free ZnO films on SiO2/Si substrate at room temperature for MEMS devices. In: AIP Advances, 5, 2015,
2015Roul, B. and Kumar, M. and Bhat, T.N. and Rajpalke, M.K. and Krupanidhi, S.B. and Kumar, N. and Sundaresan, A.: Observation of room temperature ferromagnetism in inN nanostructures. In: Journal of Nanoscience and Nanotechnology, 15, 2015, 4426-4430
2015Barala, S.S. and Singh, J. and Ranwa, S. and Kumar, M.: Radiation Induced Response of Ba0.5Sr0.5 TiO3 Based Tunable Capacitors under Gamma Irradiation. In: IEEE Transactions on Nuclear Science, 62, 2015, 1873-1878
2015Kumar, M. and Ranwa, S. and Kumar, M. and Singh, J. and Fanetti, M.: Schottky-contacted vertically self-aligned ZnO nanorods for hydrogen gas nanosensor applications. In: Journal of Applied Physics, 118, 2015,
2014Rajpalke, M.K. and Roul, B. and Bhat, T.N. and Kumar, M. and Sinha, N. and Jali, V.M. and Krupanidhi, S.B.: Effects of growth temperature on nonpolar a-plane InN grown by molecular beam epitaxy. In: Physica Status Solidi (C) Current Topics in Solid State Physics, 11, 2014, 932-935
2014Kumar, M. and Rajpalke, M.K. and Roul, B. and Bhat, T.N. and Krupanidhi, S.B.: Study of InN nanorods growth mechanism using ultrathin Au layer by plasma-assisted MBE on Si(111). In: Applied Nanoscience (Switzerland), 4, 2014, 121-125
2014Ranwa, S. and Kumar Kulriya, P. and Dixit, V. and Kumar, M.: Temperature dependent electrical transport studies of self-aligned ZnO nanorods/Si heterostructures deposited by sputtering. In: Journal of Applied Physics, 115, 2014,
2013Kumar, M. and Roul, B. and Rajpalke, M.K. and Bhat, T.N. and Kalghatgi, A.T. and Krupanidhi, S.B.: Electrical transport studies of MBE grown InGaN/Si isotype heterojunctions. In: Current Applied Physics, 13, 2013, 26-30
2013Bhat, T.N. and Rajpalke, M.K. and Roul, B. and Kumar, M. and Krupanidhi, S.B.: Impact of substrate nitridation on the photoluminescence and photovoltaic characteristics of GaN grown on p-Si (100) by molecular beam epitaxy. In: Journal of Materials Science: Materials in Electronics, 24, 2013, 3371-3375
2013Rajpalke, M.K. and Kumar, M. and Roul, B. and Bhat, T.N. and Krupanidhi, S.B.: Molecular beam epitaxial growth of (1 1 -2 2) GaN on m-plane sapphire. In: Physica Status Solidi (C) Current Topics in Solid State Physics, 10, 2013, 381-384
2013Bhat, T.N. and Roul, B. and Rajpalke, M.K. and Kumar, M. and Krupanidhi, S.B.: Spectroscopic studies of In2O3 nanostructures; Photovoltaic demonstration of In2O3/p-Si heterojunction. In: Journal of Nanoscience and Nanotechnology, 13, 2013, 498-503
2013Kumar, M. and Roul, B. and Bhat, T.N. and Rajpalke, M.K. and Krupanidhi, S.B.: Substrate impact on the growth of InN nanostructures by droplet epitaxy. In: Physica Status Solidi (C) Current Topics in Solid State Physics, 10, 2013, 409-412
2012Roul, B. and Bhat, T.N. and Kumar, M. and Rajpalke, M.K. and Kalghatgi, A.T. and Krupanidhi, S.B.: Analysis of the temperature-dependent current-voltage characteristics and the barrier-height inhomogeneities of Au/GaN Schottky diodes. In: Physica Status Solidi (A) Applications and Materials Science, 209, 2012, 1575-1578
2012Kumar, M. and Roul, B. and Bhat, T.N. and Rajpalke, M.K. and Kalghatgi, A.T. and Krupanidhi, S.B.: Band-structure lineup at In 0.2Ga 0.8N/Si heterostructures by x-ray photoelectron spectroscopy. In: Japanese Journal of Applied Physics, 51, 2012,
2012Kumar, M. and Bhat, T.N. and Roul, B. and Rajpalke, M.K. and Kalghatgi, A.T. and Krupanidhi, S.B.: Carrier concentration dependence of donor activation energy in n-type GaN epilayers grown on Si (1 1 1) by plasma-assisted MBE. In: Materials Research Bulletin, 47, 2012, 1306-1309
2012Kumar, M. and Roul, B. and Bhat, T.N. and Rajpalke, M.K. and Kalghatgi, A.T. and Krupanidhi, S.B.: Carrier-transport studies of III-nitride/Si 3N 4/Si isotype heterojunctions. In: Physica Status Solidi (A) Applications and Materials Science, 209, 2012, 994-997
2012Rajpalke, M.K. and Bhat, T.N. and Roul, B. and Kumar, M. and Krupanidhi, S.B.: Current transport in nonpolar a-plane InN/GaN heterostructures Schottky junction. In: Journal of Applied Physics, 112, 2012,
2012Kumar, M. and Rajpalke, M.K. and Roul, B. and Bhat, T.N. and Kalghatgi, A.T. and Krupanidhi, S.B.: Determination of MBE grown wurtzite GaN/Ge3N4/Ge heterojunctions band offset by X-ray photoelectron spectroscopy. In: Physica Status Solidi (B) Basic Research, 249, 2012, 58-61
2012Roul, B. and Kumar, M. and Rajpalke, M.K. and Bhat, T.N. and Kalghatgi, A.T. and Krupanidhi, S.B.: Effect of carrier concentration of InN on the transport behavior of InN/GaN heterostructure based Schottky junctions. In: Solid State Communications, 152, 2012, 1771-1775
2012Kumar, M. and Bhat, T.N. and Rajpalke, M.K. and Roul, B. and Kalghatgi, A.T. and Krupanidhi, S.B.: Indium flux, growth temperature and RF power induced effects in InN layers grown on GaN/Si substrate by plasma-assisted MBE. In: Journal of Alloys and Compounds, 513, 2012, 6-9
2012Roul, B. and Rajpalke, M.K. and Bhat, T.N. and Kumar, M. and Kalghatgi, A.T. and Krupanidhi, S.B.: Influence of GaN underlayer thickness on structural, electrical and optical properties of InN films grown by PAMBE. In: Journal of Crystal Growth, 354, 2012, 208-211
2012Kumar, M. and Roul, B. and Bhat, T.N. and Rajpalke, M.K. and Kalghatgi, A.T. and Krupanidhi, S.B.: Valence band offset at GaN/β-Si 3N 4 and β-Si 3N 4/Si(111) heterojunctions formed by plasma-assisted molecular beam epitaxy. In: Thin Solid Films, 520, 2012, 4911-4915
2011Bhat, T.N. and Kumar, M. and Rajpalke, M.K. and Roul, B. and Krupanidhi, S.B. and Sinha, N.: Band alignment studies in InN/p-Si(100) heterojunctions by x-ray photoelectron spectroscopy. In: Journal of Applied Physics, 109, 2011,
2011Roul, B. and Bhat, T.N. and Kumar, M. and Rajpalke, M.K. and Sinha, N. and Kalghatgi, A.T. and Krupanidhi, S.B.: Barrier height inhomogeneities in InN/GaN heterostructure based Schottky junctions. In: Solid State Communications, 151, 2011, 1420-1423
2011Bhat, T.N. and Rajpalke, M.K. and Roul, B. and Kumar, M. and Krupanidhi, S.B. and Sinha, N.: Evidences for ambient oxidation of indium nitride quantum dots. In: Physica Status Solidi (B) Basic Research, 248, 2011, 2853-2856
2011Kumar, M. and Rajpalke, M.K. and Bhat, T.N. and Roul, B. and Sinha, N. and Kalghatgi, A.T. and Krupanidhi, S.B.: Growth of InN layers on Si (111) using ultra thin silicon nitride buffer layer by NPA-MBE. In: Materials Letters, 65, 2011, 1396-1399
2011Rajpalke, M.K. and Bhat, T.N. and Roul, B. and Kumar, M. and Misra, P. and Kukreja, L.M. and Sinha, N. and Krupanidhi, S.B.: Growth temperature induced effects in non-polar a-plane GaN on r-plane sapphire substrate by RF-MBE. In: Journal of Crystal Growth, 314, 2011, 5-8
2011Kumar, M. and Roul, B. and Bhat, T.N. and Rajpalke, M.K. and Sinha, N. and Kalghatgi, A.T. and Krupanidhi, S.B.: Kinetics of self-assembled InN quantum dots grown on Si (111) by plasma-assisted MBE. In: Journal of Nanoparticle Research, 13, 2011, 1281-1287
2011Kumar, M. and Bhat, T.N. and Rajpalke, M.K. and Roul, B. and Sinha, N. and Kalghatgi, A.T. and Krupanidhi, S.B.: Negative differential capacitance in n-GaN/p-Si heterojunctions. In: Solid State Communications, 151, 2011, 356-359
2011Kumar, M. and Rajpalke, M.K. and Roul, B. and Bhat, T.N. and Dash, S. and Tyagi, A.K. and Kalghatgi, A.T. and Krupanidhi, S.B.: Reduction of oxygen impurity at GaN/β-Si3N4/Si interface via SiO2 to Ga2O conversion by exposing of Si surface under Ga flux. In: Journal of Crystal Growth, 327, 2011, 272-275
2011Rajpalke, M.K. and Roul, B. and Kumar, M. and Bhat, T.N. and Sinha, N. and Krupanidhi, S.B.: Structural and optical properties of nonpolar (1 1 -2 0) a-plane GaN grown on (1 -1 0 2) r-plane sapphire substrate by plasma-assisted molecular beam epitaxy. In: Scripta Materialia, 65, 2011, 33-36
2011Kumar, M. and Bhat, T.N. and Rajpalke, M.K. and Roul, B. and Sinha, N. and Kalghatgi, A.T. and Krupanidhi, S.B.: Study of band offsets in InN/Ge heterojunctions. In: Surface Science, 605, 2011, L33-L37
2011Roul, B. and Rajpalke, M.K. and Bhat, T.N. and Kumar, M. and Sinha, N. and Kalghatgi, A.T. and Krupanidhi, S.B.: Temperature dependent electrical transport behavior of InN/GaN heterostructure based Schottky diodes. In: Journal of Applied Physics, 109, 2011,
2011Kumar, M. and Roul, B. and Shetty, A. and Rajpalke, M.K. and Bhat, T.N. and Kalghatgi, A.T. and Krupanidhi, S.B.: Temperature dependent transport studies in InN quantum dots grown by droplet epitaxy on silicon nitride/Si substrate. In: Applied Physics Letters, 99, 2011,
2011Kumar, M. and Rajpalke, M.K. and Roul, B. and Bhat, T.N. and Misra, P. and Kukreja, L.M. and Sinha, N. and Kalghatgi, A.T. and Krupanidhi, S.B.: Temperature-dependent photoluminescence of GaN grown on β-Si 3N4/Si (1 1 1) by plasma-assisted MBE. In: Journal of Luminescence, 131, 2011, 614-619
2011Kumar, M. and Rajpalke, M.K. and Roul, B. and Bhat, T.N. and Sinha, N. and Kalghatgi, A.T. and Krupanidhi, S.B.: The impact of ultra thin silicon nitride buffer layer on GaN growth on Si (1 1 1) by RF-MBE. In: Applied Surface Science, 257, 2011, 2107-2110
2011Kumar, M. and Bhat, T.N. and Rajpalke, M.K. and Roul, B. and Kalghatgi, A.T. and Krupanidhi, S.B.: Transport and infrared photoresponse properties of InN nanorods/Si heterojunction. In: Nanoscale Research Letters, 6, 2011, 1-6
2010Kumar, M. and Roul, B. and Bhat, T.N. and Rajpalke, M.K. and Sinha, N. and Kalghatgi, A.T. and Krupanidhi, S.B.: Droplet epitaxy of InN quantum dots on Si(111) by RF plasma-assisted molecular beam epitaxy. In: Advanced Science Letters, 3, 2010, 379-384
2010Kumar, M. and Roul, B. and Bhat, T.N. and Rajpalke, M.K. and Misra, P. and Kukreja, L.M. and Sinha, N. and Kalghatgi, A.T. and Krupanidhi, S.B.: Improved growth of GaN layers on ultra thin silicon nitride/Si (1 1 1) by RF-MBE. In: Materials Research Bulletin, 45, 2010, 1581-1585
2010Roul, B. and Kumar, M. and Rajpalke, M.K. and Bhat, T.N. and Sinha, N. and Kalghatgi, A.T. and Krupanidhi, S.B.: Indium nitride nanometric-objects on c-sapphire grown by plasma-assisted molecular beam epitaxy. In: Nanoscience and Nanotechnology Letters, 2, 2010, 257-260
2010Kumar, M. and Bhat, T.N. and Rajpalke, M.K. and Roul, B. and Misra, P. and Kukreja, L.M. and Sinha, N. and Kalghatgi, A.T. and Krupanidhi, S.B.: Self-assembled flower-like nanostructures of InN and GaN grown by plasma-assisted molecular beam epitaxy. In: Bulletin of Materials Science, 33, 2010, 221-226
2010Bhat, T.N. and Roul, B. and Rajpalke, M.K. and Kumar, M. and Krupanidhi, S.B. and Sinha, N.: Temperature dependent transport behavior of n -InN nanodot/p-Si heterojunction structures. In: Applied Physics Letters, 97, 2010,
2007Singh, R. and Kumar, M. and Chandra, S.: Growth and characterization of high resistivity c-axis oriented ZnO films on different substrates by RF magnetron sputtering for MEMS applications. In: Journal of Materials Science, 42, 2007, 4675-4683