Dr. Sergey Filimonov

Profile

Academic positionLecturer, Assistant Professor, Researcher
Research fieldsSemiconductor Physics,Surface Physics
Keywordsepitaxial growth, organic films, organic-inorganic heterostructures, first principles calculations, Monte Carlo simulations

Current contact address

CountryRussian Federation
CityTomsk
InstitutionTomsk State University
InstituteDepartment of Physics

Host during sponsorship

Prof. Dr. Bert VoigtländerInstitut für Schichten und Grenzflächen (ISG 3), Forschungszentrum Jülich GmbH, Jülich
Prof. Dr. Alexandre TkatchenkoAbteilung Theorie, Fritz-Haber-Institut der Max-Planck-Gesellschaft, Berlin
Start of initial sponsorship01/11/2003

Programme(s)

2001Humboldt Research Fellowship Programme

Publications (partial selection)

2013Wei Liu, Sergey N. Filimonov, Javier Carrasco, Alexandre Tkatchenko Molecular switches from benzene derivatives adsorbed on metal surfaces. In: Nature Communications, 2013, 1-6
2007Sergey Filimonov, Yuri Hervieu: Adatom Incorporation and Step Crossing at the Edges of 2D Nanoislands. In: International Journal of Nanoscience, 2007, 237-240
2007Sergey Filimonov, Vasily Cherepanov, Yuri Hervieu, Bert Voigtländer: Multistage nucleation of two-dimensional Si islands on Si(111)-7×7 during MBE growth: STM experiments and extended rate-equation model . In: Phys. Rev. B, 2007, 035428-1-035428-7
2007Sergey Filimonov, Vasily Cherepanov, Yuri Hervieu, Bert Voigtländer: Si nucleation on Si(111)-7x7: from cluster pairs to 2D islands. In: Surface Science, 2007, 3876-3880
2005Sergey Filimonov, Vasily Cherepanov, Neelima Paul, Hidehito Asaoka, Jacek Brona, Bert Voigtländer: Dislocation networks in conventional and surfactant-mediated Ge/Si(111) epitaxy. In: Surface Science, 2005, 76-84
2005Sergey Filimonov, Yuri Hervieu: Step permeability effect and interlayer mass-transport in the Ge/Si(111) MBE. In: Materials Science in Semiconductor Processing, 2005, 31-34
2004Vasily Cherepanov, Sergey Filimonov, Josef Myslivecek, Bert Voigtländer: Scaling of submonolayer island sizes in surfactant-mediated epitaxy of semiconductors. In: PHYSICAL REVIEW B, 2004, 085401-1-085401-6