Publications (partial selection)
| 2019 | I Boturchuk, L Scheffler, A Nylandsted Larsen, B Julsgaard: Anomalous behavior of electrically active defects near EC?0.5 eV in MOCVD, as-grown GaN. In: AIP Advances, 2019, 025322 |
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| 2019 | Leopold Scheffler, Søren Roesgaard, John Lundsgaard Hansen, Arne Nylandsted Larsen, Brian Julsgaard: Tin-based donors in SiSn alloys. In: Journal of Applied Physics, 2019, 035702 |
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| 2018 | L Scheffler, M J Haastrup, S Roesgaard, J L Hansen, A Nylandsted Larsen, B Julsgaard: Embedded tin nanocrystals in silicon - an electrical characterization. In: Nanotechnology, 2018, 05570 |
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