Prof. Dr. Krassimira Germanova

Profil

Derzeitige Stellung	Professor W-2 und Äquivalente
Fachgebiet	Halbleiterphysik
Keywords	Solid State Physics, Elektronic and Optical Properties, Nanostructured materials, Surfaces and Interfaces, Semiconductor materials

Aktuelle Kontaktadresse

Land	Bulgarien
Ort	Sofia
Universität/Institution	"St Kliment Ohridski" University of Sofia
Institut/Abteilung	Faculty of Physics, Department of Solid State Physics and Microelectronics
Website	http://phys.uni-sofia.bg/~kger/

Gastgeber*innen während der Förderung

Prof. Dr. Frederick Koch	Institut für Physik, Technische Universität München, Garching
Prof. Dr. Frederick Koch	Physik-Department E 16, Technische Universität München, Garching
Beginn der ersten Förderung	01.01.1976

Programm(e)

1976	Humboldt-Forschungsstipendien-Programm

Publikationen (Auswahl)

1997	V. Donchev, N. Shtinkov, K. Germanova: 'Effect of random defect density fluctuations on the Fermi level in highly compensated semiconductors' . In: Mat. Sci. & Engineering B: Solid State Materials for Advanced Technology , 1997, 131
1997	V. Donchev, Tzv. Ivanov, K. Germanova: 'Electronic structure of AlAs/GaAs superlattices with an emedded centered GaAs quantum well' . In: 'Advanced Electronic Technologies and Systems Based on Low-Dimensional quantum Devices', NATO ASI Series, 3 , 1997, 51
1996	V. Donchev, I. Ivanov, K. Germanova: 'Optical and theoretical study of GaAs quantum wells embedded in GaAs/AlAs superlattices' . In: 'Heterostructure Epitaxy and Devices' NATO ASI Series, 3. , 1996, 83
1996	K.Germanova, V.Donchev: 'Time evolution of Zero-Bias photocurrent in semiinsulating GaAs:Cr'. In: J.Material Science Letters , 1996, 2075
1996	, V. Donchev, I. Ivanov, Krassimira Germanova: Optical and theoretical ssessment of GaAs quantum wells having superlattices as barrier layers. In: M. Balkanski, Devices based on Low-Dimensional Semiconductor Structures, NATO ASI Series. Kluwer Academic Publishers, 1996. 175