Dr. Pavel Rodin

Profil

Derzeitige StellungProfessor W-1 und Äquivalente
FachgebietHalbleiterphysik,Theoretische Physik der Kondensierten Materie
KeywordsPattern Formation, Self-Organization, Semiconductors, Synergetics

Aktuelle Kontaktadresse

LandRussische Föderation
OrtSt. Petersburg
Universität/InstitutionRussian Academy of Sciences
Institut/AbteilungA.F. Ioffe Physical-Technical Institute

Gastgeber*innen während der Förderung

Prof. Dr. Eckehard SchöllInstitut für Theoretische Physik, Technische Universität Berlin, Berlin
Beginn der ersten Förderung01.01.1997

Programm(e)

1996Humboldt-Forschungsstipendien-Programm

Publikationen (Auswahl)

2003P. Rodin, E. Schoell: Lateral Current Density Fronts in Asymmetric Double-Barrier Resonant-Tunneling Structures. In: Journal of Applied Physics, 2003, 6347-6353
2002P. Rodin, U. Ebert, W. Hundsdorfer, I. Grekhov: A Novel Type of Power Picosecond Semiconductor Switches Based on Tunneling-Assisted Impact Ionization Fronts. In: Proceedings of the 25th International Power Modulator Symposium, 2002, and 2002 Hight Voltage Workshop, IEEE, 2002, 445-448
2002J. Unkelbach, A. Amann, P. Rodin, E. Schoell: From Bistability to Spatio-Temporal Chaos in a Resonant-Tunneling Diode. In: Proceeding of the 10th Int. Symp. 'Nanostructures: Physics and Technology', St. Petersburt, Russia, June 17-21, 2002, 2002, 371-374
2002P. Rodin, U. Ebert, W. Hundsdorfer, I. Grekhov: Superfast Fronts of Impact Ionization in Initially Unbiased Layered Semiconductor Structures . In: Journal of Applied Physics, 2002, 1971-1980
2002P. Rodin, U. Ebert, W. Hundsdorfer, I. Grekhov: Tunneling-Assisted Impact Ionization Fronts in Semiconductors. In: Journal of Applied Physics, 2002, 958-964
1998M. Meixner, P. Rodin, E. Schoell: Accelerated, Decelerated and Oscillating Fronts in a Globally Coupled Bistable Semiconductor System. In: Physical Review E, 1998, 2796-2807
1998M. Meixner, P. Rodin, E. Schoell: Fronts in Bistable Medium with Two Global Constraints: Oscillatory Instability and Large Amplitude Limit-Cycle Motion. In: Physical Review E, 1998, 5586-5591
1998A. Alekseev, S. Bose, P. Rodin, E. Schoell: Stability of Current Filaments in a Bistable Semiconductor System with Global Coupling. In: Physical Review E, 1998, 2640-2649
1997A. Gorbatyuk, P. Rodin: Current Filamentation in Bistable Semiconductor Systems with Two Global Constraints. In: Zeitschrift fuer Physik B, 1997, 45-54
1997M. Meixner, P. Rodin, E. Schoell: Global Control over Front Propagation in Gate-driven Multilayered Structures. In: Physica Status Solidi (b), 1997, 493-496
1997A. Minarsky, P. Rodin: On Transverse Stability of an Impact Ionization Front in a Si p-n-n structure. In: Semiconductors, 1997, 366-370
1997A. Minarsky, P. Rodin: Transverse Stability and Inhomogeneous Dynamics of Superfast Impact Ionization Waves in Diode Structures. In: Solid State Electronics, 1997, 813-824