| 2004 | Mikhail Maximov, N. N. Ledentsov: Quantum Dot Lasers. In: James A. Schwarz, Cristian I. Contescu, Karol Putyera, Dekker Encyclopedia of Nanoscience and Nanotechnology. Marcel Dekker, 2004. 3109-3126 |
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| 2003 | Mikhail Maximov et al.: Control over the Parameters of InAs-GaAs Quantum Dot Arrays in the Stranski-Krastanow Growth Mode. In: Semiconductors, 2003, 861-865 |
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| 2003 | Mikhail Maximov et al.: Long-Term Stability of Long-Wavelength (>1.25 mym) Quantum-Dot Lasers Fabricated on GaAs Substrates. In: Technical Physics, 2003, 131-132 |
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| 2002 | Mikhail Maximov et al.: Edge-Emitting InGaAs/GaAs Lasers with Deeply Etched Semiconductor/Air Distributed Bragg Reflector Mirror. In: Semiconductor Science and Technology, 2002, L69-L71 |
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| 2002 | Mikhail Maximov et al.: InAs/InGaAs/GaAs quantum dot lasers of 1.3 micron range with high (88%) differential efficiency. In: Electronics Letters, 2002, 1104-1106 |
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| 2001 | Mikhail Maximov, M.A. Kaliteevski, S. Brand, R.A. Abram, V.V. Nikolaev, C.M. Sotomayor Torres, A.V. Kavokin: Electromagnetic theory of the coupling of zero-dimensional exciton and photon states: a quantum dot in a spherical microcavity. In: Phys. Rev. B, 2001, 115305 |
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| 2001 | Mikhail Maximov, L.V. Asryan, Yu.M. Shernyakov, A.F. Tsatsul'nikov, I.N. Kaiander, V.V. Nikolaev, A.R. Kovsh, S.S. Mikhrin, V.M. Ustinov, A.E. Zhukov, Zh.I. Alferov: Gain and Threshold Characteristics of Long Wavelength Lasers Based on InAs/GaAs Quantum Dots Formed by Activated Alloy Phase Seperation. In: IEEE Journal of Quantum Electronics, 2001, 676-683 |
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| 2001 | Mikhail Maximov et al.: Impact of Carrier Lateral Transport and Surface Recombination on the PL Efficiency of Mesas with Self-Organized Quantum Dots. In: phys. stat. sol. (a), 2001, 955-959 |
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| 2001 | Mikhail Maximov, I.L. Krestnikov, A.G. Makarov, A.E. Zhukov, N.A. Maleev, V.M. Ustinov, A.F. Tsatsul'nikov, Zh.I. Alferov, A.Yu. Chernyshov, N.N. Ledentsov, D. Bimberg, C.M. Sotomayor Torres: Large Spectral Splitting of TE and TM Components of QDs in a Microcavity. In: Phys. Stat. Sol. (b), 2001, 811-814 |
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| 2000 | Mikhail Maximov, N.N. Ledentsov, D. Bimberg, T. Maka, C.M. Sotomayor Torres, I.V. Kochnev, I.L. Krestnikov, V.M. Lantratov, N.A. Cherkashin, Yu.M. Musikhin, Zh.I. Alferov: 1.3 mym luminescence and gain from defect-free InGaAs-GaAs quantum dots grown by metal-organic chemical vapour deposition. In: Semicond. Sci. and Technol., 2000, 604-607 |
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| 2000 | Mikhail Maximov, A.F. Tsatsul'nikov, D.S. Sizov, Yu.M. Shernykov, A.E. Zhukov, A.R. Kovsh, S.S. Mikhrin, V.M. Ustinov, Zh.I. Alferov, N.N. Ledentsov, D. Bimberg, T. Maka, C.M. Sotomayor Torres: Carrier Relaxation Mechanisms and Fermi versus non-Fermi carrier distribution in Quantum Dots Arrays formed by Activated Alloy Phase Seperation. In: Nanotechnology, 2000, 309-313 |
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| 2000 | Mikhail Maximov et al.: Carrier relaxation in InGaAs-GaAs quantum dots formed by activated alloy phase separation. In: Zh. Alferov, L. Esaki, Nanostructures: Physics and Technology - 8th International Symposium. Ioffe Institute, 2000. 371-374 |
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| 2000 | Mikhail Maximov, I.L. Krestnikov, Yu.M. Shernykov, A.E. Zhukov, N.A. Maleev, Yu.G. Musikhin, V.M. Ustinov, Zh.I. Alferov, A.Yu. Chernyshov, N.N. Ledentsov, D. Bimberg, T.Maka, C.M. Sotomayor Torres: InGaAs-GaAs Quantum Dots for Applications in Long Wavelength (1.3 mym) Resonant Vertical Cavity Enhanced Devices. In: Journal of Electronic Materials, 2000, 487-493 |
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| 2000 | Mikhail Maximov, A.F. Tsatsul'nikov, B.V. Volovik, D.S. Sizov, Yu.M. Shernyakov, I.N. Kaiander, A.E. Zhukov, A.R. Kovsh, S.S. Mikhrin, V.M. Ustinov, Zh.I. Alferov R. Heitz, V.A. Shchukin, N.N. Ledentsov, D. Bimberg, Yu.G. Musikhin, W. Neumann: Tuning quantum dot properties by activated phase seperation of an InGa(Al)As alloy grown on InAs stressors. In: Phys. Rev. B, 2000, 16671-16680 |
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