| 2007 | S.B. Thapa, C. Kirchner, F. Scholz, G. Prinz, K. Thonke, A. Chuvilin, J. Biskupek, U. Kaiser, and D. Hofstetter: Structural and Spectroscopic Properties of AlN Layers grown by MOVPE. In: Journal of Crystal Growth, 2007, 383-386 |
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| 2006 | D. Hofstetter, M. Graf, T. Aellen, J. Faist, L. Hvozdara, and S. Blaser: 23 GHz operation of a room temperature photovoltaic quantum cascade detector at 5.35 µm. In: Applied Physics Letters, 2006, 061119 |
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| 2006 | Z. Wang, K. Reimann, M. Woerner, T. Elsaesser, D. Hofstetter, J. Hwang, W.J. Schaff, and L.F. Eastman: Phonon sidebands of intersubband absorption in AlGaN/GaN high-electron mobility transistors. In: Physica E, 2006, 562-565 |
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| 2006 | Z. Wang, K. Reimann, M. Woerner, T. Elsaesser, D. Hofstetter, E. Baumann, F.R. Giorgetta, H. Wu, W.J. Schaff, and L.F. Eastman: Ultra-fast hole-burning in intersubband absorption lines of GaN/AlN superlattices. In: Applied Physics Letters, 2006, 151103 |
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| 2005 | F.R. Giorgetta, E. Baumann, D. Hofstetter, L. Kirste, H. Wu, W.J. Schaff, and L.F. Eastman: Intersubband absorption in AlN/GaN-superlattice structures. In: Physica Status Solidi (c), 2005, 1014-1018 |
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| 2005 | C. Eichler, S.-S. Schad, F. Scholz, D. Hofstetter, S. Miller, A. Weimar, A. Lell, and V. Härle: Observation of a temperature-independent spectral envelope in violet InGaN-diode lasers. In: IEEE Photonics Technology Letters, 2005, 1782-1784 |
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| 2005 | Z. Wang, K. Reimann, M. Woerner, T. Elsaesser, D. Hofstetter, J. Hwang, W.J. Schaff, and L.F. Eastman: Optical phonon sidebands of electronic intersubband absorption in strongly polar semiconductors. In: Physical Review Letters, 2005, 037403 |
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| 2004 | S.-S. Schad, B. Neubert, C. Eichler, M. Scherer, F. Habel, M. Seyboth, D. Hofstetter, P. Unger, W. Schmid, C. Karnutsch, and K. Streubel: Absorption and light scattering in InGaN-on-sapphire and InGaP light-emitting diodes. In: IEEE Journal of Lightwave Technology, 2004, 2323-2332 |
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| 2004 | Z. Wang, K. Reimann, M. Woerner, T. Elsaesser, D. Hofstetter, J. Hwang, W.J. Schaff, and L.F. Eastman: Femtosecond intersubband dynamics of electrons in AlGaN/GaN-based high-electron-mobility transistors. In: Semiconductor Science & Technology, 2004, S463-S464 |
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| 2004 | C. Eichler, D. Hofstetter, W.W. Chow, S. Miller, A. Weimar, A. Lell, and V. Härle: Microsecond timescale lateral mode dynamics in a narrow stripe InGaN-laser. In: Applied Physics Letters, 2004, 2473-2475 |
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| 2003 | D. Hofstetter, S.-S. Schad, H. Wu, W.J. Schaff, and L.F. Eastman: GaN/AlN-based quantum well infrared photodetector for 1.55 µm. In: Applied Physics Letters, 2003, 572-574 |
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| 2003 | C. Eichler, S.-S. Schad, M. Seyboth, F. Habel, D. Hofstetter, S. Miller, A. Weimar, A. Lell, V. Härle, and M. Scherer: Time resolved study of GaN-based laser diode characteristics during pulsed operation. In: Physica Status Solidi (c), 2003, 2283-2286 |
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| 2002 | M. Beck, D. Hofstetter, T. Aellen, J. Faist, U. Oesterle, M. Ilegems, E. Gini, and H. Melchior: Continuous wave operation of a mid-infrared semiconductor laser at room temperature. In: Science, 2002, 301-305 |
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| 2002 | D. Hofstetter, J. Faist, W.J. Schaff, J. Hwang, L.F. Eastman, C. Zellweger, and L. Diehl: Mid-infrared intersubband absorption on AlGaN/GaN-based high electron mobility transistors. In: Applied Physics Letters, 2002, 2991-2993 |
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