| 2006 | V. Levedev, F. M. MORALES, H. Romanus, S. Krischok, M. Himmerlich, T. Baumann, G. Ecke, V. Cimalla, Th. Stauden, D. Cengher and O. Ambacher: Doping efficiency and segregation of Si in AlN grown by molecular beam epitaxy. In: physica status solidi (c), 2006, 1420-1424 |
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| 2006 | P. J. Bellina, A. Catanoiu, F. M. MORALES and M. Rühle: Formation of discontinuous Al2O3 layers during high-temperature oxidation of RuAl alloys. In: Journal of Material Research, 2006, 276-286 |
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| 2006 | Ch. Zgheib, L. E. McNeil, P. Masri, Ch. Förster, F. M. MORALES, Th. Stauden, O. Ambacher and J. Pezoldt: Ge-modified Si(100) substrates for the growth of 3C-SiC(100). In: Applied Physics Letters, 2006, 211909_1-211909_3 |
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| 2006 | J. Pezoldt, F.M. MORALES, Ch. Zgheib, Ch. Förster, Th. Stauden, G. Ecke, Ch. Wang and P. Masri: Investigation of the interface manipulation in SiC(100) on Si(100) with isovalent impurities. In: Surface and Interface Analysis, 2006, 444-447 |
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| 2006 | V. Lebedev, F. M. MORALES, M. Fischer, S. Krischok, T. Kups and O. Ambacher: Nanocrystalline AlN:Si field emission arrays for vacuum electronics. In: physica status solidi (a), 2006, 1839-1844 |
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| 2006 | F. M. MORALES, P. Weih, Ch. Wang, Th. Stauden, O. Ambacher and J. Pezoldt: Strain relaxation and voids reduction in SiC on Si by Ge predeposition. In: Springer proceedings in Physics, 2006, 135-138 |
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| 2006 | F. M. MORALES, Ch. Förster, O. Ambacher and J. Pezoldt: beta to alpha transition and defects on SiC on Si grown by CVD. In: Springer proceedings in Physics, 2006, 131-134 |
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| 2005 | F. M. MORALES, Ch. Förster, O. Ambacher and J. Pezoldt: Heteropolytype structures based on SiC. In: Center for Micro- and Nanotechnologies. Annual Report, 2005, 48-49 |
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| 2005 | Ch. Zgheib, L. E. McNeil, M. Kazan, P. Masri, F. M. MORALES, O. Ambacher and J. Pezoldt: Raman studies of Ge-promoted stress modulation in 3C-SiC grown on Si(111). In: Applied Physics Letters, 2005, 041905_1-041905_3 |
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| 2005 | F. M. MORALES, Ch. Förster, O. Ambacher and J. Pezoldt: SiC nanoheteropolytypic structures grown by UHVCVD on Si(111) . In: EUROCVD-15. Proceedings of the Electrochemical Society, 2005, 699-706 |
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| 2005 | F. M. MORALES, Ch. Förster, O. Ambacher and J. Pezoldt.: Stabilization of alpha phase on beta-SiC grown on Si. In: Applied Physics Letters, 2005, 201910_1-201910_3 |
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| 2005 | J. Pezoldt, Ch. Zgheib, Ch. Förster, F. M. MORALES, G. Cherkachinin, Ch. Wang, A. Leycuras, G. Ferro, Y. Monteil, I. Cimalla, O. Ambacher and P. Masri: Stress design in 3C-SiC/Si heteroepitaxial systems. In: Proceedings HET-SiC 05, Eds. G. Brauer and W. Skorupa, 2005, 21-26 |
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| 2005 | J. Pezoldt, Ch. Zgheib, F. M. MORALES, Ch. Förster, Th. Stauden, Ch. Wang, P. Masri, A. Leycuras, G. Ferro and O. Ambacher: Stress manipulation in CVD grown SiC on Si by mono- and submonolayer Ge precoverages. In: EUROCVD-15. Proceedings of the Electrochemical Society, 2005, 707-714 |
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| 2005 | V. Lebedev, F. M. MORALES, H. Romanus, S. Krischok, G. Ecke, V. Cimalla, M. Himmerlich, Th. Stauden, D. Cengher and O. Ambacher: The role of Si as surfactant and donor in molecular-beam epitaxy of AlN. In: Journal of Applied Physics, 2005, 093508_1-093508_6 |
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