Prof. Dr.-Ing. Max Christian Lemme

Profil

Derzeitige StellungProfessor W-3 und Äquivalente
FachgebietElektronische Halbleiter, Bauelemente und Schaltungen, Integrierte Systeme, Sensorik, Theoretische Elektrotechnik
KeywordsGraphene, MOSFET, NEMS, Nanowires, Silicon
Auszeichnungen

2025: IEEE Fellow

2024: RWTH Fellow

2018: ERC Proof-of-Concept Grant

2012: ERC Starting Grant

2012: Heisenberg Professur der DFG

2007: Feodor Lynen Forschungsstipendium

2006: NanoFutur Nachwuchsgruppe des BMBF

Aktuelle Kontaktadresse

LandDeutschland
OrtAachen
Universität/InstitutionRheinisch-Westfälische Technische Hochschule Aachen (RWTH)
Institut/AbteilungFakultät 6 - Elektrotechnik und Informationstechnik

Gastgeber*innen während der Förderung

Prof. Dr. Frans A. SpaepenDivision of Engineering and Applied Sciences, Harvard University, Cambridge
Prof. Dr. Charles M. MarcusDepartment of Physics, Harvard University, Cambridge
Beginn der ersten Förderung01.07.2008

Programm(e)

2007Feodor Lynen-Forschungsstipendien-Programm

Publikationen (Auswahl)

2019Lanza, Mario and Wong, H-S Philip and Pop, Eric and Ielmini, Daniele and Strukov, Dimitri and Regan, Brian C and Larcher, Luca and Villena, Marco A and Yang, J Joshua and Goux, Ludovic and others: Recommended methods to study resistive switching devices. In: Advanced Electronic Materials, 5, 2019, 1800143
2016Yim, Chanyoung and Lee, Kangho and McEvoy, Niall and O'Brien, Maria and Riazimehr, Sarah and Berner, Nina C and Cullen, Conor P and Kotakoski, Jani and Meyer, Jannik C and Lemme, Max C and others: High-performance hybrid electronic devices from layered PtSe2 films grown at low temperature. In: ACS Nano, 10, 2016, 9550--9558
2015Lupina, Grzegorz and Kitzmann, Julia and Costina, Ioan and Lukosius, Mindaugas and Wenger, Christian and Wolff, Andre and Vaziri, Sam and Ostling, Mikael and Pasternak, Iwona and Krajewska, Aleksandra and others: Residual Metallic Contamination of Transferred Chemical Vapor Deposited Graphene. In: ACS Nano, 9, 2015, 4776--4785
2015Smith, Anderson D and Elgammal, Karim and Niklaus, Frank and Delin, Anna and Fischer, Andreas C and Vaziri, Sam and Forsberg, Fredrik and R{\aa}sander, Mikael and Hugosson, H{\aa}kan and Bergqvist, Lars and others: Resistive graphene humidity sensors with rapid and direct electrical readout. In: Nanoscale, 7, 2015, 19099--19109
2014Li, Jiantong and Naiini, Maziar M and Vaziri, Sam and Lemme, Max C and Östling, Mikael: Inkjet printing of MoS2. In: Advanced Functional Materials, 24, 2014, 6524--6531
2013Vaziri, Sam and Lupina, Grzegorz and Henkel, Christoph and Smith, Anderson D and Östling, Mikael and Dabrowski, Jarek and Lippert, Gunther and Mehr, Wolfgang and Lemme, Max C: A graphene-based hot electron transistor. In: Nano Letters, 13, 2013, 1435--1439
2013Li, Jiantong and Ye, Fei and Vaziri, Sam and Muhammed, Mamoun and Lemme, Max C and Östling, Mikael: Efficient inkjet printing of graphene. In: Advanced Materials, 25, 2013, 3985--3992
2013Smith, AD and Niklaus, Frank and Paussa, A and Vaziri, Sam and Fischer, Andreas C and Sterner, Mikael and Forsberg, Fredrik and Delin, Anna and Esseni, D and Palestri, P and others: Electromechanical piezoresistive sensing in suspended graphene membranes. In: Nano Letters, 13, 2013, 3237--3242
2013Abadal, Sergi and Alarc{\'o}n, Eduard and Cabellos-Aparicio, Albert and Lemme, Max C and Nemirovsky, Mario: Graphene-enabled wireless communication for massive multicore architectures. In: IEEE Communications Magazine, 51, 2013, 137--143
2012Mehr, Wolfgang and Scheytt, J Christoph and Dabrowski, Jarek and Lippert, Gunther and Xie, Ya-Hong and Lemme, Max C and Ostling, Mikael and Lupina, Grzegorz: Vertical graphene base transistor. In: IEEE Electron Device Letters, 33, 2012, 691--693
2011Max C. Lemme, Frank H. L. Koppens, Abram L. Falk, Mark S. Rudner, Hongkun Park, Leonid S. Levitov, Charles M. Marcus: Gate-Activated Photoresponse in a Graphene p n Junction. In: Nano Letters, 2011, 4134-4137
2011Lemme, Max C and Koppens, Frank HL and Falk, Abram L and Rudner, Mark S and Park, Hongkun and Levitov, Leonid S and Marcus, Charles M: Gate-activated photoresponse in a graphene p--n junction. In: Nano Letters, 11, 2011, 4134--4137
2010Mashoff, T and Pratzer, M and Geringer, V and Echtermeyer, TJ and Lemme, Max C and Liebmann, M and Morgenstern, M: Bistability and oscillatory motion of natural nanomembranes appearing within monolayer graphene on silicon dioxide. In: Nano Letters, 10, 2010, 461--465
2010Lemme, Max C: Current status of graphene transistors. Solid State Phenomena. 2010. 499--509
2009Lemme, Max C and Bell, David C and Williams, James R and Stern, Lewis A and Baugher, Britton WH and Jarillo-Herrero, Pablo and Marcus, Charles M: Etching of graphene devices with a helium ion beam. In: ACS Nano, 3, 2009, 2674--2676
2009Geringer, V and Liebmann, M and Echtermeyer, T and Runte, S and Schmidt, M and Rückamp, R and Lemme, Max C and Morgenstern, M: Intrinsic and extrinsic corrugation of monolayer graphene deposited on SiO 2. In: Physical review letters, 102, 2009, 076102
2009Bell, David C and Lemme, Max C and Stern, Lewis A and Williams, Jimmy R and Marcus, Charles M: Precision cutting and patterning of graphene with helium ions. In: Nanotechnology, 20, 2009, 455301
2009David C. Bell, Max C. Lemme, Lewis A. Stern, Charles M. Marcus : Precision material modification and patterning with He ions . In: Journal of Vacuum Science and Technology B, 2009, 2755-2758
2008Lemme, Max C and Echtermeyer, Tim J and Baus, Matthias and Szafranek, BN and Bolten, J and Schmidt, M and Wahlbrink, T and Kurz, H: Mobility in graphene double gate field effect transistors. In: Solid-State Electronics, 52, 2008, 514--518
2008Echtermeyer, Tim J and Lemme, Max C and Baus, Matthias and Szafranek, Bartholomäus N and Geim, Andre K and Kurz, Heinrich: Non-volatile switching in graphene field effect devices. In: IEEE Electron Device Letters, 29, 2008, 952--954
2007Engström, Olof and Raeissi, Bahman and Hall, Steve and Buiu, Octavian and Lemme, Max C and Gottlob, HDB and Hurley, PK and Cherkaoui, Karim: Navigation aids in the search for future high-k dielectrics: Physical and electrical trends. In: Solid-State Electronics, 51, 2007, 622--626