Dr. Ryan B. Lewis

Profil

Derzeitige StellungProfessor W-1 und Äquivalente
FachgebietHalbleiterphysik
KeywordsNanowires, Molecular beam epitaxy, Gallium arsenide, Bismuth

Aktuelle Kontaktadresse

LandKanada
OrtHamilton
Universität/InstitutionMcMaster University
Institut/AbteilungDepartment of Engineering Physics
Websitehttps://www.eng.mcmaster.ca/engphys/people/faculty/ryan-lewis

Gastgeber*innen während der Förderung

Prof. Dr. Henning RiechertPaul-Drude-Institut für Festkörperelektronik (PDI), Berlin
Beginn der ersten Förderung01.03.2016

Programm(e)

2015Humboldt-Forschungsstipendien-Programm für Postdocs

Publikationen (Auswahl)

2019Pierre Corfdir, Oliver Marquardt, Ryan B Lewis, Chiara Sinito, Manfred Ramsteiner, Achim Trampert, Uwe Jahn, Lutz Geelhaar, Oliver Brandt, Vladimir M Fomin: Excitonic Aharonov–Bohm Oscillations in Core–Shell Nanowires. In: Advanced Materials, 2019, 1805645
2018Ali Al Hassan, Arman Davtyan, Hanno Küpers, Ryan B Lewis, Danial Bahrami, Florian Bertram, Genziana Bussone, Carsten Richter, Lutz Geelhaar, Ullrich Pietsch: Complete structural and strain analysis of single GaAs/(In, Ga) As/GaAs core–shell–shell nanowires by means of in-plane and out-of-plane X-ray nanodiffraction. In: Journal of Applied Crystallography, 2018, 1387-1395
2018A. Al Hassan, R. B. Lewis, H. Küpers, W. -H. Lin, D. Bahrami, T. Krause, D. Salomon, A. Tahraoui, M. Hanke, L. Geelhaar and U. Pietsch: Determination of Indium content of GaAs/(In,Ga)As/(GaAs) core-shell(-shell) nanowires by x-ray diffraction and nano x-ray fluorescence. In: Physical Review Materials, 2018, 014604
2018Hanno Küpers, Ryan B Lewis, Abbes Tahraoui, Mathias Matalla, Olaf Krüger, Faebian Bastiman, Henning Riechert, Lutz Geelhaar: Diameter evolution of selective area grown Ga-assisted GaAs nanowires. In: Nano Research, 2018, 2885-2893
2018R. B. Lewis, P. Corfdir, H. Küpers, T. Flissikowski, O. Brandt, and L. Geelhaar: Nanowires bending over backward from strain partitioning in asymmetric core–shell heterostructures. In: Nano Letters, 2018, 2343-2350
2018Ludwig Hüttenhofer, Dionysios Xydias, Ryan B Lewis, Sander Rauwerdink, Abbes Tahraoui, Hanno Küpers, Lutz Geelhaar, Oliver Marquardt, Stefan Ludwig: Optimization of Ohmic Contacts to -Type Nanowires. In: Physical Review Applied, 2018, 034024
2017R. B. Lewis, L. Nicolai, H. Küpers, M. Ramsteiner, A. Trampert and L. Geelhaar: Anomalous strain relaxation in core-shell nanowire heterostructures via simultaneous coherent and incoherent growth. In: Nano Letters, 2017, 136-142
2017Wan-Hsien Lin, Uwe Jahn, Hanno Küpers, Esperanza Luna, Ryan B Lewis, Lutz Geelhaar, Oliver Brandt: Efficient methodology to correlate structural with optical properties of GaAs nanowires based on scanning electron microscopy. In: Nanotechnology, 2017, 415703
2017Pierre Corfdir, Ryan B Lewis, Lutz Geelhaar, Oliver Brandt: Fine structure of excitons in InAs quantum dots on GaAs (110) planar layers and nanowire facets. In: Physical Review B, 2017, 045435
2017Ryan B. Lewis, Pierre Corfdir, Hong Li, Jesús Herranz, Carsten Pfüller, Oliver Brandt, Lutz Geelhaar: Quantum dot self-assembly driven by a surfactant-induced morphological instability. In: Physical Review Letters, 2017, 086101
2017Ryan B Lewis, Pierre Corfdir, Jesús Herranz, Hanno Küpers, Uwe Jahn, Oliver Brandt, Lutz Geelhaar: Self-assembly of InAs nanostructures on the sidewalls of GaAs nanowires directed by a Bi surfactant. In: Nano Letters, 2017, 4255-4260
2017Hanno Küpers, Abbes Tahraoui, Ryan B Lewis, Sander Rauwerdink, Mathias Matalla, Olaf Krüger, Faebian Bastiman, Henning Riechert, Lutz Geelhaar: Surface preparation and patterning by nano imprint lithography for the selective area growth of GaAs nanowires on Si (111). In: Semiconductor Science and Technology, 2017, 115003
2017Arman Davtyan, Thilo Krause, Dominik Kriegner, Ali Al-Hassan, Danial Bahrami, SM Mostafavi Kashani, Ryan B Lewis, Hanno Küpers, Abbes Tahraoui, Lutz Geelhaar, Michael Hanke, Steven John Leake, Otmar Loffeld, Ullrich Pietsch: Threefold rotational symmetry in hexagonally shaped core–shell (In, Ga) As/GaAs nanowires revealed by coherent X-ray diffraction imaging. In: Journal of Applied Crystallography, 2017, 673-680
2016P. Corfdir, H. Küpers, R. B. Lewis, T. Flissikowski, H. T. Grahn, L. Geelhaar and O. Brandt: Exciton dynamics in GaAs/(Al, Ga) As core-shell nanowires with shell quantum dots. In: Physical Review B, 2016, 155413
2016P. Corfdir, R. B. Lewis, O. Marquardt, H. Küpers, J. Grandal, E. Dimakis, A. Trampert, L. Geelhaar, O. Brandt, and R. T. Phillips: Exciton recombination at crystal-phase quantum rings in GaAs/InxGa1−xAs core/multishell nanowires. In: Applied Physics Letters, 2016, 082107