Prof. Dr. Daniel Hiller

Profil

Derzeitige StellungProfessor W-2 und Äquivalente
FachgebietHalbleiterphysik,Oberflächenphysik
KeywordsNanoelectronics, Quantum materials, Silicon heterojunction solar cells, Silicon modulation doping, High-efficiency photovoltaics

Aktuelle Kontaktadresse

LandDeutschland
OrtFreiberg
Universität/InstitutionTechnische Universität Bergakademie Freiberg
Institut/AbteilungInstitut für Angewandte Physik

Gastgeber*innen während der Förderung

Prof. Dr. Andrew William BlakersCentre for Sustainable Energy Systems, Dept. of Engineering, FEIT, Australian National University, Canberra
Prof. Dr.-Ing. Thomas MikolajickNaMLab gGmbH, Technische Universität Dresden, Dresden
Beginn der ersten Förderung01.11.2017

Programm(e)

2017Feodor Lynen-Forschungsstipendien-Programm für erfahrene Forschende

Publikationen (Auswahl)

2021J A T De Guzman and V P Markevich and D Hiller and I D Hawkins and M P Halsall and A R Peaker: Passivation of thermally-induced defects with hydrogen in float-zone silicon. In: Journal of Physics D: Applied Physics, 54, 2021, 275105
2021Daniel Hiller and David Tröger and Matthias Grube and Dirk König and Thomas Mikolajick: The negative fixed charge of atomic layer deposited aluminium oxide{\textemdash}a two-dimensional {SiO}2/{AlO} x interface effect. In: Journal of Physics D: Applied Physics, 54, 2021, 275304
2020Daniel Hiller, Ray Duffy, Steffen Strehle, Paul Stradins: Advances in Silicon-Nanoelectronics, Nanostructures and High-Ef?ciency Si-Photovoltaics (Editorial). In: Physica Status Solidi A, 2020, 2000023
2020Nicholas E. Grant, Alex I. Pointon, Richard Jefferies, Daniel Hiller, Yisong Han, Richard Beanland, Marc Walker, John D. Murphy: Atomic level termination for passivation and functionalisation of silicon surfaces. In: Nanoscale, 12, 2020, 17332-17341
2020Mozaffari, Naeimeh and Shen, Heping and Yin, Yanting and Li, Yueliang and Hiller, Daniel and Jacobs, Daniel A. and Nguyen, Hieu T. and Phang, Pheng and Andersson, Gunther G. and Kaiser, Ute and White, Thomas P. and Weber, Klaus and Catchpole, Kylie R.: Efficient Passivation and Low Resistivity for p+-Si/TiO2 Contact by Atomic Layer Deposition. In: ACS Applied Energy Materials, 3, 2020, 6291-6301
2020Hiller, Daniel and Markevich, Vladimir P. and de Guzman, Joyce Ann T. and König, Dirk and Prucnal, Slawomir and Bock, Wolfgang and Julin, Jaakko and Peaker, Anthony R. and Macdonald, Daniel and Grant, Nicholas E. and Murphy, John D.: Kinetics of Bulk Lifetime Degradation in Float-Zone Silicon: Fast Activation and Annihilation of Grown-In Defects and the Role of Hydrogen versus Light. In: physica status solidi (a), 217, 2020, 2000436
2020Daniel Hiller, Philipp Hönicke, Dirk König: Material combination of Tunnel-SiO2 with a (sub-)Monolayer of ALD-AlOx on silicon offering a highly passivating hole selective contact. In: Solar Energy Materials & Solar Cells, 2020, 110654
2020Daniel Hiller, Jaakko Julin, Ahmed Chnani, Steffen Strehle: Silicon Surface Passivation by ALD-Ga2O3: Thermal vs. Plasma-Enhanced Atomic Layer Deposition. In: IEEE Journal of Photovoltaics, 2020, 959-968
2019Daniel Hiller, Paul M. Jordan, Kaining Ding, Manuel Pomaska, Thomas Mikolajick, Dirk König: Deactivation of silicon surface states by Al-induced acceptor states from Al–O monolayers in SiO2. In: Journal of Applied Physics, 2019, 015301
2019Dirk König, Noël Wilck, Daniel Hiller, Birger Berghoff, Alexander Meledin, Giovanni Di Santo, Luca Petaccia, Joachim Mayer, Sean Smith, Joachim Knoch: Electronic Structure Shift of Deeply Nanoscale Silicon by SiO2 versus Si3N4 Embedding as an Alternative to Impurity Doping. In: Physical Review Applied, 2019, 054050
2019TomᚠPopelá?, LukᚠOndi?, Ivan Pelant, Kate?ina K?sová, Daniel Hiller: Energy transfer channel between silicon nanocrystals and an optical centeremitting above their bandgap. In: Journal of Luminescence, 2019, 116685
2019Jan Valenta, Mikel Greben, Sergey A. Dyakov, Nikolay A. Gippius, Daniel Hiller, Sebastian Gutsch, Margit Zacharias: Nearly perfect near-infrared luminescence efficiency of Si nanocrystals: A comprehensive quantum yield study employing the Purcell effect. In: Scientific Reports, 2019, 11214
2019TomᚠChlouba, František Trojánek, Vladimír Kopecký, Julian López-Vidrier, Sergi Hernandéz, Daniel Hiller, Sebastian Gutsch, Margit Zacharias, Petr Malý: Pathways of carrier recombination in Si/SiO2 nanocrystal superlattices. In: Journal of Applied Physics, 2019, 163101
2019Irving Cruz-Matías, Dolors Ayala, Daniel Hiller, Sebastian Gutsch, Margit Zacharias, Sònia Estradé, Francesca Peiró: Sphericity and roundness computation for particles using the extreme vertices model. In: Journal of Computational Science, 2019, 28-40
2018Daniel Hiller, Julian López-Vidrier, Keita Nomoto, Michael Wahl, Wolfgang Bock, TomᚠChlouba, František Trojánek, Sebastian Gutsch, Margit Zacharias, Dirk König, Petr Malý, Michael Kopnarski: Absence of free carriers in silicon nanocrystals grown from phosphorus- and boron-doped silicon-rich oxide and oxynitride. In: Beilstein Journal of Nanotechnology, 2018, 1501-1511
2018Dirk König, Daniel Hiller, Noël Wilck, Birger Berghoff, Merlin Müller, Sangeeta Thakur, Giovanni Di Santo, Luca Petaccia, Joachim Mayer, Sean Smith, Joachim Knoch: Intrinsic ultrasmall nanoscale silicon turns n-/p-type with SiO2/Si3N4-coating. In: Beilstein Journal of Nanotechnology, 2018, 2255-2264
2018Holger Beh, Daniel Hiller, Margit Zacharias: Optimization of ALD-ZnO Thin Films Toward Higher Conductivity. In: Physica Status Solidi A, 2018, 1700880
2018Holger Beh, Daniel Hiller, Jan Salava, František Trojánek, Margit Zacharias, Petr Malý, Jan Valenta: Photoluminescence dynamics and quantum yield of intrinsically conductive ZnO from atomic layer deposition. In: Journal of Luminescence, 2018, 85-89
2018Dirk König, Daniel Hiller, Sean Smith: SiO2 Modulation Doping for Si: Acceptor Candidates. In: Physical Review Applied, 2018, 054034
2018Daniel Hiller, Jo?rg Go?ttlicher, Ralph Steininger, Thomas Huthwelker, Jaakko Julin, Frans Munnik, Michael Wahl, Wolfgang Bock, Ben Schoenaers, Andre Stesmans, Dirk Ko?nig: Structural Properties of Al?O Monolayers in SiO2 on Silicon and the Maximization of Their Negative Fixed Charge Density. In: ACS Applied Materials & Interfaces, 2018, 30495-30505
2018Max O. Williams, Ada L. H. Jervell, Daniel Hiller, Margit Zacharias: Using HCl to Control Silver Dissolution in Metal-Assisted Chemical Etching of Silicon. In: Physica Status Solidi A, 2018, 1800135
n.n.Hiller, Daniel and König, Dirk and Nagel, Peter and Merz, Michael and Schuppler, Stefan and Smith, Sean C.: On the Location of Boron in SiO2-Embedded Si Nanocrystals—An X-ray Absorption Spectroscopy and Density Functional Theory Study. In: physica status solidi (b), n/a, n.n., 2000623